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تسجيل مستخدم جديدTheory of spin Hall magnetoresistance (SMR) and related phenomena
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We review the recently discovered spin Hall magnetoresistance (SMR) and related effects from a theoretical point of view. The SMR is observed in bilayers of a magnetic insulator and a metal, in which spin currents aregenerated in the normal metal due to the spin Hall effect. The associated angular momentum transfer to the ferromagnetic layer and thereby the electrical resistance is modulated by the angle between the applied current and the magnetization direction. The SMR provides a convenient tool to non-invasively measure the magnetization direction and spin-transfer torque to an insulator. We introduce the minimal theoretical instruments to calculate the SMR, i.e. spin diffusion theory and quantum mechanical boundary conditions. This leads to a small set of parameters that can be fitted to experiments. We discuss the limitations of the theory as well as alternative mechanisms such as the ferromagnetic proximity effect and Rashba spin-orbit torques, and point out new developments related to the SMR.
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Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins and magnet
ization at the interface. SMR has been used to read out information written in a small magnet and to detect magnetization dynamics, but it has been limited to magnets; magnetic ordered phases or instability of magnetic phase transition has been believed to be indispensable. Here, we report the observation of SMR in a paramagnetic insulator Gd$_{3}$Ga$_{5}$O$_{12}$ (GGG) without spontaneous magnetization combined with a Pt film. The paramagnetic SMR can be attributed to spin-transfer torque acting on localized spins in GGG. We determine the efficiencies of spin torque and spin-flip scattering at the Pt/GGG interface, and demonstrate these quantities can be tuned with external magnetic fields. The results clarify the mechanism of spin-transport at a metal/paramagnetic insulator interface, which gives new insight into the spintronic manipulation of spin states in paramagnetic systems.
We analyze the experimentally obtained spin-current-related magnetoresistance in epitaxial Pt/Co bilayers by using a drift-diffusion model that incorporates both bulk spin Hall effect and interfacial Rashba-Edelstein effect (REE). The magnetoresistan
ce analysis yields, for the Pt/Co interface, a temperature-independent Rashba parameter in the order of 1e-11 eV m that agrees with theoretical calculations, along with an effective interfacial REE thickness of several angstroms which is in overall consistency with our previous spin-orbit torque analysis. In particular, our results suggest that both bulk and interface charge-spin current inter-
We present the Co-Gd composition dependence of the spin-Hall magnetoresistance (SMR) and anisotropic magnetoresistance (AMR) for ferrimagnetic Co100-xGdx / Pt bilayers. With Gd concentration x, its magnetic moment increasingly competes with the Co mo
ment in the net magnetization. We find a nearly compensated ferrimagnetic state at x = 24. The AMR changes sign from positive to negative with increasing x, vanishing near the magnetization compensation. On the other hand, the SMR does not vary significantly even where the AMR vanishes. These experimental results indicate that very different scattering mechanisms are responsible for AMR and SMR. We discuss a possible origin for the alloy composition dependence.
We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted be
tween Pt and Y3Fe5O12, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it spin Hall magnetoresistance.
We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse resistivities while r
otating an applied magnetic field of up to 17T in three orthogonal planes. For out-of-plane magnetotransport measurements, we find indications for a multidomain antiferromagnetic configuration whenever the field is aligned along the film normal. For in-plane field rotations, we clearly observe a sinusoidal resistivity oscillation characteristic for the SMR due to a coherent rotation of the Neel vector. The maximum SMR amplitude of 0.25% is, surprisingly, twice as high as for prototypical ferrimagnetic Y3Fe5O12/Pt heterostructures. The SMR effect saturates at much smaller magnetic fields than in comparable antiferromagnets, making the alpha-Fe2O3/Pt system particularly interesting for room-temperature antiferromagnetic spintronic applications.
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