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تسجيل مستخدم جديدMagnetotransport Measurements of the Surface States of Samarium Hexaboride using Corbino Structures
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The recent conjecture of a topologically-protected surface state in SmB$_6$ and the verification of robust surface conduction below 4 K have prompted a large effort to understand the surface states. Conventional Hall transport measurements allow current to flow on all surfaces of a topological insulator, so such measurements are influenced by contributions from multiple surfaces of varying transport character. Instead, we study magnetotransport of SmB$_6$ using a Corbino geometry, which can directly measure the conductivity of a single, independent surface. Both (011) and (001) crystal surfaces show a strong negative magnetoresistance at all magnetic field angles measured. The (011) surface has a carrier mobility of $122text{ cm}^2/text{V}cdottext{sec}$ with a carrier density of $2.5times10^{13} text{ cm}^{-2}$, which are significantly smaller than indicated by Hall transport studies. This mobility value can explain a failure so far to observe Shubnikov-de Haas oscillations. Analysis of the angle-dependence of conductivity on the (011) surface suggests a combination of a field-dependent enhancement of the carrier density and a suppression of Kondo scattering from native oxide layer magnetic moments as the likely origin of the negative magnetoresistance. Our results also reveal a hysteretic behavior whose magnitude depends on the magnetic field sweep rate and temperature. Although this feature becomes smaller when the field sweep is slower, does not disappear or saturate during our slowest sweep-rate measurements, which is much slower than a typical magnetotransport trace. These observations cannot be explained by quantum interference corrections such as weak anti-localization, but are more likely due to an extrinsic magnetic effect such as the magnetocaloric effect or glassy ordering.
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The peculiar metallic electronic states observed in the Kondo insulator, samarium hexaboride (SmB$_6$), has stimulated considerable attention among those studying non-trivial electronic phenomena. However, experimental studies of these states have le
d to controversial conclusions mainly to the difficulty and inhomogeneity of the SmB$_6$ crystal surface. Here, we show the detailed electronic structure of SmB$_6$ with angle-resolved photoelectron spectroscopy measurements of the three-fold (111) surface where only two inequivalent time-reversal-invariant momenta (TRIM) exist. We observe the metallic two-dimensional state was dispersed across the bulk Kondo gap. Its helical in-plane spin polarisation around the surface TRIM suggests that SmB$_6$ is topologically non-trivial, according to the topological classification theory for weakly correlated systems. Based on these results, we propose a simple picture of the controversial topological classification of SmB$_6$.
Recent theoretical and experimental studies suggest that SmB$_6$ is the first topological Kondo insulator: A material in which the interaction between localized and itinerant electrons renders the bulk insulating at low temperature, while topological
surface states leave the surface metallic. While this would elegantly explain the materials puzzling conductivity, we find the experimentally observed candidates for both predicted topological surface states to be of trivial character instead: The surface state at $bar{Gamma}$ is very heavy and shallow with a mere $sim 2$ meV binding energy. It exhibits large Rashba splitting which excludes a topological nature. We further demonstrate that the other metallic surface state, located at $bar{X}$, is not an independent in-gap state as supposed previously, but part of a massive band with much higher binding energy (1.7 eV). We show that it remains metallic down to 1 K due to reduced hybridization with the energy-shifted surface 4$f$ level.
Strongly correlated electron systems show many exotic properties such as unconventional superconductity, quantum criticality, and Kondo insulating behavior. In addition, the Kondo insulator SmB6 has been predicted theoretically to be a 3D topological
insulator with a metallic surface state. We report here transport measurements on doped SmB6, which show that ~3% magnetic and non-magnetic dopants in SmB6 exhibit clearly contrasting behavior, evidence that the metallic surface state is only destroyed when time reversal symmetry is broken. We find as well a quantum percolation limit of impurity concentration which transform the topological insulator into a conventional band insulator by forming impurity band. Our careful thickness dependence results show that SmB6 is the first demonstatrated perfect 3D topological insulator with virtually zero residual bulk conductivity.
The research effort prompted by the prediction that SmB$_6$ could be the first topological Kondo insulator has produced a wealth of new results, though not all of these seem compatible. A major discrepancy exists between scanning tunneling microscopy
/ spectroscopy (STM/S) and angle-resolved photoemission spectroscopy (ARPES), because the two experimental methods suggest a very different number of terminations of the (100) surface with different properties. Here we tackle this issue in a combined STM/S and ARPES study. We find that two of the well-ordered topographies reported in earlier STM studies can be associated with the crystal terminations identified using photoemission. We further observe a reversal of the STM contrast with bias voltage for one of the topographies. We ascribe this result to a different energy dependence of Sm and B-derived states, and show that it can be used to obtain element specific images of SmB$_6$ and identify which topography belongs to which termination. We finally find STS results to support a modification of the low-energy electronic structure at the surface that has been proposed as the trivial origin of surface metallicity in this material.
We present a new model to explain the difference between the transport and spectroscopy gaps in samarium hexaboride (SmB$_6$), which has been a mystery for some time. We propose that SmB$_6$ can be modeled as an intrinsic semiconductor with a depleti
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