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We present an experimental study of KIDs fabricated of atomic layer deposited TiN films, and characterized at radiation frequencies of $350$~GHz. The responsivity to radiation is measured and found to increase with increasing radiation powers, opposite to what is expected from theory and observed for hybrid niobium titanium nitride / aluminium (NbTiN/Al) and all-aluminium (all-Al) KIDs. The noise is found to be independent of the level of the radiation power. The noise equivalent power (NEP) improves with higher radiation powers, also opposite to what is observed and well understood for hybrid NbTiN/Al and all-Al KIDs. We suggest that an inhomogeneous state of these disordered superconductors should be used to explain these observations.
Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures
Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. In this report, we model and compare the dielectric loss in bulk and interfacial dielectrics in titanium nitride (TiN) and aluminum (Al) superconducting co
If driven sufficiently strongly, superconducting microresonators exhibit nonlinear behavior including response bifurcation. This behavior can arise from a variety of physical mechanisms including heating effects, grain boundaries or weak links, vorte
We report on the direct measurement of the electron-phonon relaxation time, {tau}eph, in disordered TiN films. Measured values of {tau}eph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T-3 temperature dependence
We have fabricated planar amorphous Indium Oxide superconducting resonators ($T_csim2.8$ K) that are sensitive to frequency-selective radiation in the range of 7 to 10 GHz. Those values lay far below twice the superconducting gap that worths about 20