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We investigate the organized formation of strain, ripples and suspended features in macroscopic CVD-prepared graphene sheets transferred onto a corrugated substrate made of an ordered arrays of silica pillars of variable geometries. Depending on the aspect ratio and sharpness of the corrugated array, graphene can conformally coat the surface, partially collapse, or lay, fakir-like, fully suspended between pillars over tens of micrometers. Upon increase of pillar density, ripples in collapsed films display a transition from random oriented pleats emerging from pillars to ripples linking nearest neighboring pillars organized in domains of given orientation. Spatially-resolved Raman spectroscopy, atomic force microscopy and electronic microscopy reveal uniaxial strain domains in the transferred graphene, which are induced and controlled by the geometry. We propose a simple theoretical model to explain the transition between suspended and collapsed graphene. For the arrays with high aspect ratio pillars, graphene membranes stays suspended over macroscopic distances with minimal interaction with pillars tip apex. It offers a platform to tailor stress in graphene layers and open perspectives for electron transport and nanomechanical applications.
We theoretically investigate electron transport through corrugated graphene ribbons and show how the ribbon curvature leads to an electronic superlattice with a period set by the corrugation wave length. Transport through the ribbon depends sensitive
Strain engineering of graphene takes advantage of one of the most dramatic responses of Dirac electrons enabling their manipulation via strain-induced pseudo-magnetic fields. Numerous theoretically proposed devices, such as resonant cavities and vall
We perform {textit ab initio} calculations for the strain-induced formation of non-hexagonal-ring defects in graphene, graphane (planar CH), and graphenol (planar COH). We find that the simplest of such topological defects, the Stone-Wales defect, ac
Due to atomically thin structure, graphene/hexagonal boron nitride (G/hBN) heterostructures are intensively sensitive to the external mechanical forces and deformations being applied to their lattice structure. In particular, strain can lead to the m
In graphene, out-of-plane (flexural) vibrations and static ripples imposed by the substrate relax the electron spin, intrinsically protected by mirror symmetry. We calculate the relaxation times in different scenarios, accounting for all the possible