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The slowdown of optical pulses due to quantum-coherence effects is investigated theoretically for an active material consisting of InGaAs-based double quantum-dot molecules. These are designed to exhibit a long lived coherence between two electronic levels, which is an essential part of a quantum coherence scheme that makes use of electromagnetically-induced transparency effects to achieve group velocity slowdown. We apply a many-particle approach based on realistic semiconductor parameters that allows us to calculate the quantum-dot material dynamics including microscopic carrier scattering and polarisation dephasing dynamics. The group-velocity reduction is characterized in the frequency domain by a quasi-equilibrium slow-down factor and in the time domain by the probe-pulse slowdown obtained from a calculation of the spatio-temporal material dynamics coupled to the propagating optical field. The group-velocity slowdown in the quantum-dot molecule is shown to be substantially higher than what is achievable from similar transitions in typical InGaAs-based single quantum dots. The dependences of slowdown and shape of the propagating probe pulses on lattice temperature and drive intensities are investigated.
Electron tunneling through a two stage Kondo system constituted by a double quantum-dot molecule side coupled to a quantum wire, under the effect of a finite external potential is studied. We found that $I$-$V$ characteristic shows a negative differe
We report a successful measurement of the magnetic field-induced spin singlet-triplet transition in silicon-based coupled dot systems. Our specific experimental scheme incorporates a lateral gate-controlled Coulomb-blockaded structure in Si to meet t
We demonstrate the Josephson effect in a serial double quantum dot defined in a nanowire with epitaxial superconducting leads. The supercurrent stability diagram adopts a honeycomb pattern with electron-hole and left-right reflection symmetry. We obs
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly
A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor quantum dots (Q