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We explore mechanical properties of top down fabricated, singly clamped inverted conical GaAs nanowires. Combining nanowire lengths of 2-9 $mu$m with foot diameters of 36-935 nm yields fundamental flexural eigenmodes spanning two orders of magnitude from 200 kHz to 42 MHz. We extract a size-independent value of Youngs modulus of (45$pm$3) GPa. With foot diameters down to a few tens of nanometers, the investigated nanowires are promising candidates for ultra-flexible and ultra-sensitive nanomechanical devices.
We report on the non-destructive measurement of Youngs modulus of thin-film single crystal beta gallium oxide (beta-Ga2O3) out of its nanoscale mechanical structures by measuring their fundamental mode resonance frequencies. From the measurements, we
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, i
As described in the work of Mietke et al. (1) the deformation (defined as 1 - circularity [see (2)]) of a purely elastic, spherical object deformed in a real-time deformability cytometry (RT-DC) experiment can be mapped to its apparent Youngs Modulus
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal-semiconducto
We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantag