ﻻ يوجد ملخص باللغة العربية
The pressure dependent phonon modes of predominant wurtzite InAs nanowires has been investigated in a diamond anvil cell under hydrostatic pressure up to 58 GPa. The TO and LO at Gamma point and other optical phonon frequencies increase linearly while the LO TO splitting decreases with pressure. The recorded Raman modes have been used to determine the mode Gruneisen parameters and also the value of Borns transverse effective charge. The calculated Borns transverse effective charge exhibits a linear reduction with increasing pressure implying an increase in covalency of nanowires under compression. The intensity of the Raman modes shows a strong enhancement as the energy of E1 band gap approaches the excitation energy, which has been discussed in terms of resonant Raman scattering. An indication of structural phase transformation has been observed above pressure 10.87 GPa. We propose this transformation may be from wurtzite to rock salt phase although further experimental and theoretical confirmations are needed.
The results of micro-Raman scattering measurements performed on three different ``graphitic materials: micro-structured disks of highly oriented pyrolytic graphite, graphene multi-layers thermally decomposed from carbon terminated surface of 4H-SiC a
We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments
We report on the direct measurement of the electron spin splitting and the accompanying nuclear Overhauser (OH) field, and thus the underlying nuclear spin polarization (NSP) and fluctuation bandwidth, in a single InAs quantum dot under resonant exci
We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) based on InAs nanowires and vanadium superconducting electrodes. These mesoscopic devices are found to be extremely robust against thermal cycling
Ferroelectric phase transition in the semiconductor Sn2P2S6 single crystal has been studied by means of neutron scattering in the pressure-temperature range adjacent to the anticipated tricritical Lifshitz point (p=0.18GPa, T=296K). The observations