اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSpin-spin interaction in the bulk of topological insulators
120
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We apply mean-field theory and Hirsch-Fye quantum Monte Carlo method to study the spin-spin interaction in the bulk of three-dimensional topological insulators. We find that the spin-spin interaction has three different components: the longitudinal, the transverse and the transverse Dzyaloshinskii-Moriya-like terms. When the Fermi energy is located in the bulk gap of topological insulators, the spin-spin interaction decays exponentially due to Bloembergen-Rowland interaction. The longitudinal correlation is antiferromagnetic and the transverse correlations are ferromagnetic. When the chemical potential is in the conduction or valence band, the spin-spin interaction follows power law decay, and isotropic ferromagnetic interaction dominates in short separation limit.
قيم البحث
اقرأ أيضاً
Interactions between the surface and the bulk in a strong topological insulator (TI) cause a finite lifetime of the topological surface states (TSS) as shown by the recent experiments. On the other hand, interactions also induce unitary processes, wh
ich, in the presence of anisotropy and the spin-orbit coupling (SOC), can induce non-trivial effects on the spin texture. Recently, such effects were observed experimentally in the $Bi_2X_3$ family, raising the question that the hexagonal warping (HW) may be linked with new spin-related anomalies. The most remarkable among which is the 6-fold periodic canting of the in-plane spin vector. Here, we show that, this anomaly is the result of a {it triple cooperation between the interactions, the SOC and the HW}. To demonstrate it, we formulate the spin-off-diagonal self energy. A unitary phase with an even symmetry develops in the latter and modulates the spin-1/2 vortex when the Fermi surface is anisotropic. When the anisotropy is provided by the HW, a 6-fold in-plane spin-canting is observed. Our theory suggests that the spin-canting anomaly in $Bi_2X_3$ is a strong evidence of the interactions. High precision analysis of the spin-texture is a promising support for further understanding of the interactions in TIs.
The recent discovery of magnetic topological insulators has opened new avenues to explore exotic states of matter that can emerge from the interplay between topological electronic states and magnetic degrees of freedom, be it ordered or strongly fluc
tuating. Motivated by the effects that the dynamics of the magnetic moments can have on the topological surface states, we investigate the magnetic fluctuations across the (MnBi$_{text{2}}$Te$_{text{4}}$)(Bi$_{text{2}}$Te$_{text{3}}$)$_{text{n}}$ family. Our paramagnetic electron spin resonance experiments reveal contrasting Mn spin dynamics in different compounds, which manifests in a strongly anisotropic Mn spin relaxation in MnBi$_{text{2}}$Te$_{text{4}}$ while being almost isotropic in MnBi$_{text{4}}$Te$_{text{7}}$. Our density-functional calculations explain these striking observations in terms of the sensitivity of the local electronic structure to the Mn spin-orientation, and indicate that the anisotropy of the magnetic fluctuations can be controlled by the carrier density, which may directly affect the electronic topological surface states.
Non-invasive local probes are needed to characterize bulk defects in binary and ternary chalcogenides. These defects contribute to the non-ideal behavior of topological insulators. We have studied bulk electronic properties via $^{125}$Te NMR in Bi$_
2$Te$_3$, Sb$_2$Te$_3$, Bi$_{0.5}$Sb$_{1.5}$Te$_3$, Bi$_2$Te$_2$Se and Bi$_2$Te$_2$S. A distribution of defects gives rise to asymmetry in the powder lineshapes. We show how the Knight shift, line shape and spin-lattice relaxation report on carrier density, spin-orbit coupling and phase separation in the bulk. The present study confirms that the ordered ternary compound Bi$_2$Te$_2$Se is the best TI candidate material at the present time. Our results, which are in good agreement with transport and ARPES studies, help establish the NMR probe as a valuable method to characterize the bulk properties of these materials.
Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should
remain coherent and significantly spin polarized at ambient temperatures. Here, we studied the coherence and spin-structure of the topological states on the surface of a model topological insulator, Bi2Se3, at elevated temperatures in spin and angle-resolved photoemission spectroscopy. We found an extremely weak broadening and essentially no decay of spin polarization of the topological surface state up to room temperature. Our results demonstrate that the topological states on surfaces of topological insulators could serve as a basis for room temperature electronic devices.
The archetypical 3D topological insulators Bi2Se3, Bi2Te3 and Sb2Te3 commonly exhibit high bulk conductivities, hindering the characterization of the surface state charge transport. The optimally doped topological insulators Bi2Te2Se and Bi2-xSbxTe2S
, however, allow for such characterizations to be made. Here we report the first experimental comparison of the topological surface states and bulk conductances of Bi2Te2Se and Bi1.1Sb0.9Te2S, based on temperature-dependent high-pressure measurements. We find that the surface state conductance at low temperatures remains constant in the face of orders of magnitude increase in the bulk state conductance, revealing in a straightforward way that the topological surface states and bulk states are decoupled at low temperatures, consistent with theoretical models, and confirming topological insulators to be an excellent venue for studying charge transport in 2D Dirac electron systems.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
