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Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments

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 نشر من قبل Salvatore Fiore PhD
 تاريخ النشر 2013
  مجال البحث فيزياء
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The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under gamma, neutrons, protons and heavy ions. Similar tests are discussed for commercial DC-DC converters, also tested in operation under magnetic field.



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