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We propose a remarkably simple electronic refrigerator based on the Coulomb barrier for single-electron tunneling. A fully normal single-electron transistor is voltage $V$ biased at a gate position such that tunneling through one of the junctions costs an energy of about $k_BT ll eV, E_C$, where $T$ is the temperature and $E_C$ is the transistor charging energy. The tunneling in the junction with positive energy cost cools both the electrodes attached to it. Immediate practical realizations of such a refrigerator make use of Andreev mirrors which suppress heat current while maintaining full electric contact.
We present an experimental realization of a Coulomb blockade refrigerator (CBR) based on a single - electron transistor (SET). In the present structure, the SET island is interrupted by a superconducting inclusion to permit charge transport while pre
Quantum technology promises revolutionizing applications in information processing, communications, sensing, and modelling. However, efficient on-demand cooling of the functional quantum degrees of freedom remains a major challenge in many solid-stat
The Coulomb gap observed in tunneling between parallel two-dimensional electron systems, each at half filling of the lowest Landau level, is found to depend sensitively on the presence of an in-plane magnetic field. Especially at low electron density
We present measurements of one-dimensional superconductor-semiconductor Coulomb islands, fabricated by gate confinement of a two-dimensional InAs heterostructure with an epitaxial Al layer. When tuned via electrostatic side gates to regimes without s
The emerging quantum technological applications call for fast and accurate initialization of the corresponding devices to low-entropy quantum states. To this end, we theoretically study a recently demonstrated quantum-circuit refrigerator in the case