اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدElectrophoretic-like gating used to control metal-insulator transitions in electronically phase separated manganite wires
143
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Electronically phase separated manganite wires are found to exhibit controllable metal-insulator transitions under local electric fields. The switching characteristics are shown to be fully reversible, polarity independent, and highly resistant to thermal breakdown caused by repeated cycling. It is further demonstrated that multiple discrete resistive states can be accessed in a single wire. The results conform to a phenomenological model in which the inherent nanoscale insulating and metallic domains are rearranged through electrophoretic-like processes to open and close percolation channels.
قيم البحث
اقرأ أيضاً
One-dimensional (1D) confinement has been revealed to effectively tune the properties of materials in homogeneous states. The 1D physics can be further enriched by electronic inhomogeneity, which unfortunately remains largely unknown. Here we demonst
rate the ultra-high sensitivity to magnetic fluctuations and the tunability of phase stability in the electronic transport properties of self-assembled electronically phase-separated manganite nanowires with extreme aspect ratio. The onset of magnetic nano-droplet state, a precursor to the ferromagnetic metallic state, is unambiguously revealed, which is attributed to the small lateral size of the nanowires that is comparable to the droplet size. Moreover, the quasi-1D anisotropy stabilizes thin insulating domains to form intrinsic tunneling junctions in the low temperature range, which is robust even under magnetic field up to 14 T, and thus essentially modifies the classic 1D percolation picture to stabilize a novel quantum percolation state. A new phase diagram is therefore established for the manganite system under quasi-1D confinement for the first time. Our findings offer new insight to understand and manipulate the colorful properties of the electronically phase-separated systems via dimensionality engineering.
By using a realist microscopic model, we study the electric and magnetic properties of the interface between a half metallic manganite and an insulator. We find that the lack of carriers at the interface debilitates the double exchange mechanism, wea
kening the ferromagnetic coupling between the Mn ions. In this situation the ferromagnetic order of the Mn spins near the interface is unstable against antiferromagnetic CE correlations, and a separation between ferromagnetic/metallic and antiferromagnetic/insulator phases at the interfaces can occur. We obtain that the insertion of extra layers of undoped manganite at the interface introduces extra carriers which reinforce the double exchange mechanism and suppress antiferromagnetic instabilities.
Substitutions in the Mn-sublattice of antiferromagnetic, charge and orbitally ordered manganites was recently found to produce intriguing metamagnetic transitions, consisting of a succession of sharp magnetization steps separated by plateaus. The com
pounds exhibiting such features can be divided in two categories, depending on whether they are sensitive to thermal cycling effects or not. One compound of each category has been considered in the present study. The paper reports on the influence of two treatments: high-temperature annealing and grinding. It is shown that both of these treatments can drastically affect the phenomenon of magnetization steps. These results provide us with new information about the origin of these jumps in magnetization.
Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambi
ent environment. Taking advantage of these strengths, we report on NV-based local sensing of the electrically driven insulator-to-metal transition (IMT) in a proximal Mott insulator. We studied the resistive switching properties of both pristine and ion-irradiated VO2 thin film devices by performing optically detected NV electron spin resonance measurements. These measurements probe the local temperature and magnetic field in electrically biased VO2 devices, which are in agreement with the global transport measurement results. In pristine devices, the electrically-driven IMT proceeds through Joule heating up to the transition temperature while in ion-irradiated devices, the transition occurs non-thermally, well below the transition temperature. Our results provide the first direct evidence for non-thermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.
We show that strong enough electric fields can trigger nucleation of needle-shaped metallic embryos in insulators, even when the metal phase is energetically unfavorable without the field. This general phenomenon is due to the gigantic induced dipole
moments acquired by the embryos which cause sufficient electrostatic energy gain. Nucleation kinetics are exponentially accelerated by the field-induced suppression of nucleation barriers. Our theory opens the venue of field driven material synthesis. In particular, we briefly discuss synthesis of metallic hydrogen at standard pressure.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
