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Interlayer tunneling measurements in the strongly correlated bilayer quantized Hall phase at $ u_T=1$ are reported. The maximum, or critical current for tunneling at $ u_T=1$, is shown to be a well-defined global property of the coherent phase, insensitive to extrinsic circuit effects and the precise configuration used to measure it, but also exhibiting a surprising scaling behavior with temperature. Comparisons between the experimentally observed tunneling characteristics and a recent theory are favorable at high temperatures, but not at low temperatures where the tunneling closely resembles the dc Josephson effect. The zero-bias tunneling resistance becomes extremely small at low temperatures, vastly less than that observed at zero magnetic field, but nonetheless remains finite. The temperature dependence of this tunneling resistance is similar to that of the ordinary in-plane resistivity of the quantum Hall phase.
Half-filled Landau levels admit the theoretically powerful fermion-vortex duality but longstanding puzzles remain in their experimental realization as $ u_T=1$ quantum Hall bilayers, further complicated by Zheng et als recent numerical discovery of a
The nature of the fractional quantum Hall effect at $ u=1/2$ observed in wide quantum wells almost three decades ago is still under debate. Previous studies have investigated it by the variational Monte Carlo method, which makes the assumption that t
I review recent novel experimental and theoretical advances in the physics of quantum Hall effect bilayers. Of particular interest is a broken symmetry state which optimizes correlations by putting the electrons into a coherent superposition of the two different layers.
In this work we report the opening of an energy gap at the filling factor $ u=3+1/3$, firmly establishing the ground state as a fractional quantum Hall state. This and other odd-denominator states unexpectedly break particle-hole symmetry. Specifical
Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at filling fra