ﻻ يوجد ملخص باللغة العربية
The generation of a fully valley-polarized current (FVPC) in bulk graphene is a fundamental goal in valleytronics. To this end, we investigate valley-dependent transport through a strained graphene modulated by a finite magnetic superlattice. It is found that this device allows a coexistence of insulating transmission gap of one valley and metallic resonant band of the other. Accordingly, a substantial bulk FVPC appears in a wide range of edge orientation and temperature, which can be effectively tuned by structural parameters. A valley-resolved Hall configuration is designed to measure the valley polarization degree of the filtered current.
We show that the optical excitation of graphene with polarized light leads to the pure valley current where carriers in the valleys counterflow. The current in each valley originates from asymmetry of optical transitions and electron scattering by im
We show how the trigonal warping effect in doped graphene can be used to produce fully valley polarized currents. We propose a device that acts both as a beam splitter and a collimator of these electronic currents. The result is demonstrated trough a
Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to electrically
Twisted bilayer graphene (TBG) aligned with hexagonal boron nitride (h-BN) substrate can exhibit an anomalous Hall effect at 3/4 filling due to the spontaneous valley polarization in valley resolved moire bands with opposite Chern number [Science 367
We study the electronic transport properties at the intersection of three topological zero-lines as the elementary current partition node that arises in minimally twisted bilayer graphene. Unlike the partition laws of two intersecting zero-lines, we