Electrically Detected Double Electron-Electron Resonance: Exchange Interaction of 31P Donors and Pb0 Defects at the Si/SiO2 Interface

We study the coupling of Pb0 dangling bond defects at the Si/SiO2 interface and 31P donors in an epitaxial layer directly underneath using electrically detected double electron-electron resonance (EDDEER). An exponential decay of the EDDEER signal is observed, which is attributed to a broad distribution of exchange coupling strengths J/2pi from 25 kHz to 3 MHz. Comparison of the experimental data with a numerical simulation of the exchange coupling shows that this range of coupling strengths corresponds to 31P-Pb0 distances ranging from 14 nm to 20 nm.