اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدBeam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector
136
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper.
قيم البحث
اقرأ أيضاً
Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a
function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.
Planar silicon pixel sensors with modified n$^+$-implantation shapes based on the IBL pixel sensor were designed in Dortmund. The sensors with a pixel size of $250,mu$m $times$ $50,mu$m are produced in n$^+$-in-n sensor technology. The charge colle
ction efficiency should improve with electrical field strength maxima created by the different n$^+$-implantation shapes. Therefore, higher particle detection efficiencies at lower bias voltages could be achieved. The modified pixel designs and the IBL standard design are placed on one sensor to test and compare the designs. The sensor can be read out with the FE-I4 readout chip. At the iWoRiD 2018, measurements of sensors irradiated with protons and neutrons respectively at different facilities were presented and showed incongruent results. Unintended annealing during irradiation was considered as an explanation for the observed differences in the hit detection efficiency for two neutron irradiated sensors. This hypothesis will be examined and confirmed in this work, presenting first annealing studies of sensors irradiated with neutrons in Ljubljana.
The ATLAS experiment at the LHC will replace its current inner tracker system for the HL-LHC era. 3D silicon pixel sensors are being considered as radiation-hard candidates for the innermost layers of the new fully silicon-based tracking detector. 3D
sensors with a small pixel size of $mathrm{50 times 50~mu m^{2}}$ and $mathrm{25 times 100~mu m^{2}}$ compatible with the first prototype ASIC for the HL-LHC, the RD53A chip, have been studied in beam tests after uniform irradiation to $mathrm{5 times 10^{15}~n_{eq}/cm^{2}}$. An operation voltage of only 50 V is needed to achieve a 97% hit efficiency after this fluence.
Results of beam tests with planar silicon pixel sensors aimed towards the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include spatial resolution, charge collection performance and charge sharing betw
een neighbouring cells as a function of track incidence angle for different bulk materials. Measurements of n-in-n pixel sensors are presented as a function of fluence for different irradiations. Furthermore p-type silicon sensors from several vendors with slightly differing layouts were tested. All tested sensors were connected by bump-bonding to the ATLAS Pixel read-out chip. We show that both n-type and p-type tested planar sensors are able to collect significant charge even after integrated fluences expected at HL-LHC.
To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE,
FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is minimized thanks to the active edge technology. In this paper we report on two productions, a first one consisting of 200 {mu}m thick n-on-p sensors with active edge, a second one composed of 100 and 130 {mu}m thick n-on-p sensors. Those sensors have been tested on beam, both at CERN-SPS and at DESY and their performance before and after irradiation will be presented.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
