اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSpontaneous Symmetry Breaking and Dynamic Phase Transition in Monolayer Silicene
151
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The (r3xr3)R30{deg} honeycomb of silicene monolayer on Ag(111) was found to undergo a phase transition to two types of mirror-symmetric boundary-separated rhombic phases at temperatures below 40 K by scanning tunneling microscopy. The first-principles calculations reveal that weak interactions between silicene and Ag(111) drive the spontaneous ultra buckling in the monolayer silicene, forming two energy-degenerate and mirror-symmetric (r3xr3)R30{deg} rhombic phases, in which the linear band dispersion near Dirac point (DP) and a significant gap opening (150 meV) at DP were induced. The low transition barrier between these two phases enables them interchangeable through dynamic flip-flop motion, resulting in the (r3xr3)R30{deg} honeycomb structure observed at high temperature.
قيم البحث
اقرأ أيضاً
We study the geometric and electronic structures of silicene monolayer using density functional theory based calculations. The electronic structures of silicene show that it is a semi-metal and the charge carriers in silicene behave like massless Dir
ac-Fermions since it possesses linear dispersion around Dirac point. Our results show that the band gap in silicene monolayer can be opened up at Fermi level due to an external electric field by breaking the inversion symmetry. The presence of buckling in geometric structure of silicene plays an important role in breaking the inversion symmetry. We also show that the band gap varies linearly with the strength of external electric field. Further, the value of band gap can be tuned over a wide range.
Strong light-matter interactions within nanoscale structures offer the possibility of optically controlling material properties. Motivated by the recent discovery of intrinsic long-range magnetic order in two-dimensional materials, which allows for t
he creation of novel magnetic devices of unprecedented small size, we predict that light can couple with magnetism and efficiently tune magnetic orders of monolayer ruthenium trichloride (RuCl3). First-principles calculations show that both free carriers and optically excited electron-hole pairs can switch monolayer RuCl3 from the proximate spin-liquid phase to a stable ferromagnetic phase. Specifically, a moderate electron-hole pair density (on the order of 10^13 cm-2) can significantly stabilize the ferromagnetic phase by 10 meV/f.u. in comparison to the zigzag phase, so that the predicted ferromagnetism can be driven by optical pumping experiments. Analysis shows that this magnetic phase transition is driven by a combined effect of doping-induced lattice strain and itinerant ferromagnetism. According to the Ising-model calculation, we find that the Curie temperature of the ferromagnetic phase can be increased significantly by raising carrier or electron-hole pair density. This enhanced opto-magnetic effect opens new opportunities to manipulate two-dimensional magnetism through non-contact, optical approaches.
In the triangular layered magnet PdCrO2 the intralayer magnetic interactions are strong, however the lattice structure frustrates interlayer interactions. In spite of this, long-range, 120$^circ$ antiferromagnetic order condenses at $T_N = 38$~K. We
show here through neutron scattering measurements under in-plane uniaxial stress and in-plane magnetic field that this occurs through a spontaneous lifting of the three-fold rotational symmetry of the nonmagnetic lattice, which relieves the interlayer frustration. We also show through resistivity measurements that uniaxial stress can suppress thermal magnetic disorder within the antiferromagnetic phase.
Band-inverted electron-hole bilayers support quantum spin Hall insulator and exciton condensate phases. We investigate such a bilayer in an external magnetic field. We show that the interlayer correlations lead to formation of a helical quantum Hall
exciton condensate state. In contrast to the chiral edge states of the quantum Hall exciton condensate in electron-electron bilayers, existence of the counterpropagating edge modes results in formation of a ground state spin-texture not supporting gapless single-particle excitations. This feature has deep consequences for the low energy behavior of the system. Namely, the charged edge excitations in a sufficiently narrow Hall bar are confined, i.e.~a charge on one of the edges always gives rise to an opposite charge on the other edge. Moreover, we show that magnetic field and gate voltages allow to control confinement-deconfinement transition of charged edge excitations, which can be probed with nonlocal conductance. Confinement-deconfinement transitions are of great interest, not least because of their possible significance in shedding light on the confinement problem of quarks.
Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase transition i
n a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any external dopants. A strong mechanical softening of the membrane is measured concurrently and may only be related to the phase 2H-1T phase transition which imposes a 3percent directional elongation of the topological 1T phase with respect to the semiconducting 2H. We note that only a few percent 2H- 1T phase switching is sufficient to observe measurable memristive effects. Our experimental results combined with First-principles total energy calculations indicate that sulfur vacancy diffusion plays a key role in the initial nucleation of the phase transition. Our study clearly shows that nanomechanics represents an ultrasensitive technique to probe the crystal phase transition in 2D materials or thin membranes. Finally, a better control of the microscopic mechanisms responsible for the observed memristive effect in MoS2 is important for the implementation of future devices.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
