اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدBarkhausen-type noise in the resistance of antiferromagnetic Cr thin films
260
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We present an experimental study of the changes generated on the electrical resistance $R(T)$ of epitaxial Cr thin films by the transformation of quantized spin density wave domains as the temperature is changed. A characteristic resistance noise appears only within the same temperature region where a cooling-warming cycle in $R(T)$ displays hysteretic behavior. We propose an analysis based on an analogy with the Barkhausen noise seen in ferromagnets. There fluctuations in the magnetization $M(H)$ occur when the magnetic field $H$ is swept. By mapping $M rightarrow Psi_0$ and $H rightarrow T$, where $Psi_0$ corresponds to the order parameter of the spin density wave, we generalize the Preisach model in terms of a random distribution of {it resistive hysterons} to explain our results. These hysterons are related to distributions of quantized spin density wave domains with different sizes, local energies and number of nodes.
قيم البحث
اقرأ أيضاً
We present measurements of the electrical resistivity, $rho$, in epitaxial Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature, $T$. The $rho(T)$ curves display hysteretic behavior in certain temperature rang
e, which is film thickness dependent. The hysteresis are related to the confinement of quantized incommensurate spin density waves (ISDW) in the film thickness. Our important finding is to experimentally show that the temperature $T_{mid}$ where the ISDW changes from $N$ to $N$,+,1 nodes {it decreases} as the film thickness {it increases}. Identifying $T_{mid}$ with a first order transition between ISDW states with $N$ and $N$,+,1 nodes, and using a Landau approach to the free energy of the ISDW together with Monte Carlo simulations, we show that the system at high temperatures explores all available modes for the ISDW, freezing out in one particular mode at a transition temperature that indeed decreases with film thickness, $L$. The detailed dependence of $T_{mid}(L)$ seems to depend rather strongly on the boundary conditions at the Cr film interfaces.
We report on Cr doping effect in Mn3Sn polycrystalline films with both uniform and modulation doping. It is found that Cr doping with low concentration does not cause notable changes to the structural and magnetic properties of Mn3Sn, but it signific
antly enhances the anomalous Hall conductivity, particularly for modulation-doped samples at low temperature. A Hall conductivity as high as 184.8 {Omega}-1 cm-1 is obtained for modulation-doped samples at 50 K, in a sharp contrast to vanishingly small values for undoped samples at the same temperature. We attribute the enhancement to the change of Fermi level induced by Cr doping
We show that the spin-orbit coupling (SOC) in alpha-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Gamma. A minimal k-dot-p model is constructed to capture this s
plitting by group theory analysis, a tight-binding model and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-field planer Hall effect (PHE). The upper limit of the PHE percentage is shown to be fundamentally determined by the band shape, and is quantitatively estimated to be roughly 31% by first principles.
The temperature dependent resistance $R$($T$) of polycrystalline ferromagnetic CoFeB thin films of varying thickness are analyzed considering various electrical scattering processes. We observe a resistance minimum in $R$($T$) curves below $simeq$ 29
K, which can be explained as an effect of intergranular Coulomb interaction in a granular system. The structural and Coulomb interaction related scattering processes contribute more as the film thickness decreases implying the role of disorder and granularity. Although the magnetic contribution to the resistance is the weakest compared to these two, it is the only thickness independent process. On the contrary, the negative coefficient of resistance can be explained by electron interaction effect in disordered amorphous films.
Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite ({alpha}-Fe2O3)
and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic based structures. To understand the observed complex SMR field dependence, we analyse the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
