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تسجيل مستخدم جديدLow-temperature surface conduction in the Kondo insulator SmB$_6$
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We study the transport properties of the Kondo insulator SmB$_6$ with a specialized configuration designed to distinguish bulk-dominated conduction from surface-dominated conduction. We find that as the material is cooled below 4 K, it exhibits a crossover from bulk to surface conduction with a fully insulating bulk. We take the robustness and magnitude of the surface conductivity, as is manifest in the literature of SmB$_6$, to be strong evidence for the topological insulator metallic surface states recently predicted for this material.
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SmB6 is a strongly correlated mixed-valence Kondo insulator with a newly discovered surface state, proposed to be of non-trivial topological origin. However, the surface state dominates electrical conduction only below T* ~ 4 K limiting its scientifi
c investigation and device application. Here, we report the enhancement of T * in SmB6 under the application of tensile strain. With 0.7% tensile strain we report surface dominated conduction at up to a temperature of 240 K, persisting even after the strain has been removed. This can be explained in the framework of strain-tuned temporal and spatial fluctuations of f-electron configurations, which might be generally applied to other mixed-valence materials. We note that this amount of strain can be indued in epitaxial SmB6 films via substrate in potential device applications.
Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by ionic liq
uid gating with electrodes patterned in a Corbino disk geometry on a single surface. By separately tuning bulk and surface conduction channels, we show conclusive evidence for a model with an insulating bulk and metallic surface states, with a crossover temperature that depends solely on the relative contributions of each conduction channel. The surface conductance, on the order of 100 e^2/h and electron-like, exhibits a field-effect mobility of 133 cm^2/V/s and a large carrier density of ~2x10^{14}/cm^2, in good agreement with recent photoemission results. With the ability to gate-modulate surface conduction by more than 25%, this approach provides promise for both fundamental and applied studies of gate-tuned devices structured on bulk crystal samples.
The temperature and thickness dependencies of the in-plane anisotropic magnetoresistance (AMR) of SmB$_6$ thin films are reported. We find that the AMR changes sign from negative ($rho_{||}<rho_{perp}$) at high temperatures to positive ($rho_{||}>rho
_{perp}$) at low temperatures. The temperature, T$_s$, at which this sign change occurs, decreases with increasing film thickness $t$ and T$_s$ vanishes for $t$ $>$ 30 nm. We interpret our results in the framework of a competition between two components: a negative bulk contribution and a positive surface AMR.
Temperature dependence of the electronic structure of SmB6 is studied by high-resolution ARPES down to 1 K. We demonstrate that there is no essential difference for the dispersions of the surface states below and above the resistivity saturating anom
aly (~ 3.5 K). Quantitative analyses of the surface states indicate that the quasi-particle scattering rate increases linearly as a function of temperature and binding energy, which differs from Fermi-Liquid behavior. Most intriguingly, we observe that the hybridization between the d and f states builds gradually over a wide temperature region (30 K < T < 110 K). The surface states appear when the hybridization starts to develop. Our detailed temperature-dependence results give a complete interpretation of the exotic resistivity result of SmB6, as well as the discrepancies among experimental results concerning the temperature regions in which the topological surface states emerge and the Kondo gap opens, and give new insights into the exotic Kondo crossover and its relationship with the topological surface states in the topological Kondo insulator SmB6.
Samarium hexaboride is a topological Kondo insulator, with metallic surface states manifesting from its insulating band structure. Since the insulating bulk itself is driven by strong correlations, both the bulk and surface host compelling magnetic a
nd electronic phenomena. We employed X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) at the Sm M$_{4,5}$ edges to measure surface and bulk magnetic properties of Sm$^{2+}$ and Sm$^{3+}$ within SmB$_6$. We observed anti-alignment to the applied field of the Sm$^{3+}$ magnetic dipole moment below $T = 75$ K and of the total orbital moment of samarium below 30 K. The induced Sm$^{3+}$ moment at the cleaved surface at 8 K and 6 T implies 1.5% of the total Sm as magnetized Sm$^{3+}$. The field dependence of the Sm$^{3+}$ XMCD dichorism at 8 K is diamagnetic and approximately linear. The bulk magnetization at 2 K is however driven by Sm$^{2+}$ Van Vleck susceptibility as well as 1% paramagnetic impurities with $mu_{rm Eff} = 5.2(1)~mu_{rm B}$. This indicates diamagnetic Sm$^{3+}$ is compensated within the bulk. The XAS and XMCD spectra are weakly affected by Sm vacancies and carbon doping while XAS is strongly affected by polishing.
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