ترغب بنشر مسار تعليمي؟ اضغط هنا

Evaporative CO2 cooling using microchannels etched in silicon for the future LHCb vertex detector

138   0   0.0 ( 0 )
 نشر من قبل Andrei Nomerotski
 تاريخ النشر 2012
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The extreme radiation dose received by vertex detectors at the Large Hadron Collider dictates stringent requirements on their cooling systems. To be robust against radiation damage, sensors should be maintained below -20 degree C and at the same time, the considerable heat load generated in the readout chips and the sensors must be removed. Evaporative CO2 cooling using microchannels etched in a silicon plane in thermal contact with the readout chips is an attractive option. In this paper, we present the first results of microchannel prototypes with circulating, two-phase CO2 and compare them to simulations. We also discuss a practical design of upgraded VELO detector for the LHCb experiment employing this approach.



قيم البحث

اقرأ أيضاً

LHCb is one of the four main experiments of the Large Hadron Collider (LHC) project, which will start at CERN in 2008. The experiment is primarily dedicated to B-Physics and hence requires precise vertex reconstruction. The silicon vertex locator (VE LO) has a single hit precision of better than 10 micron and is used both off-line and in the trigger. These requirements place strict constraints on its alignment. Additional challenges for the alignment arise from the detector being retracted between each fill of the LHC and from its unique circular disc r/phi strip geometry. This paper describes the track based software alignment procedure developed for the VELO. The procedure is primarily based on a non-iterative method using a matrix inversion technique. The procedure is demonstrated with simulated events to be fast, robust and to achieve a suitable alignment precision.
A new silicon detector has been developed to provide the PHENIX experiment with precise charged particle tracking at forward and backward rapidity. The Forward Silicon Vertex Tracker (FVTX) was installed in PHENIX prior to the 2012 run period of the Relativistic Heavy Ion Collider (RHIC). The FVTX is composed of two annular endcaps, each with four stations of silicon mini-strip sensors, covering a rapidity range of $1.2<|eta|<2.2$ that closely matches the two existing PHENIX muon arms. Each station consists of 48 individual silicon sensors, each of which contains two columns of mini-strips with 75 $mu$m pitch in the radial direction and lengths in the $phi$ direction varying from 3.4 mm at the inner radius to 11.5 mm at the outer radius. The FVTX has approximately 0.54 million strips in each endcap. These are read out with FPHX chips, developed in collaboration with Fermilab, which are wire bonded directly to the mini-strips. The maximum strip occupancy reached in central Au-Au collisions is approximately 2.8%. The precision tracking provided by this device makes the identification of muons from secondary vertices away from the primary event vertex possible. The expected distance of closest approach (DCA) resolution of 200 $mu$m or better for particles with a transverse momentum of 5 GeV/$c$ will allow identification of muons from relatively long-lived particles, such as $D$ and $B$ mesons, through their broader DCA distributions.
132 - Marina Artuso 2009
LHC will offer the opportunity of probing the mass scale of the electro-weak symmetry breaking. Thus we expect to uncover direct manifestations of physics beyond the Standard Model, which will raise new questions that may be elucidated by precision m easurements of beauty and charm decays. The LHCb experiment is poised to pursue this ambitious program as soon as LHC turns on. An upgrade to enhance its physics sensitivity by at least one order of magnitude is critical to the completion of this study, as new physics effects may be subtle. A new vertex detector is a crucial element of this project. Important requirements are a radiation resistance up to a fluence of about 10$^{16} n_{eq} {rm cm}^{-2}$, and a front end electronics capable of delivering its event information to the back end receiver boards synchronously with the beam interactions, at 40 MHz.
60 - M. Alexander , W. Barter , A. Bay 2018
Precise knowledge of the location of the material in the LHCb vertex locator (VELO) is essential to reducing background in searches for long-lived exotic particles, and in identifying jets that originate from beauty and charm quarks. Secondary intera ctions of hadrons produced in beam-gas collisions are used to map the location of material in the VELO. Using this material map, along with properties of a reconstructed secondary vertex and its constituent tracks, a $p$-value can be assigned to the hypothesis that the secondary vertex originates from a material interaction. A validation of this procedure is presented using photon
The LHCb Vertex Locator (VELO) is a silicon strip detector designed to reconstruct charged particle trajectories and vertices produced at the LHCb interaction region. During the first two years of data collection, the 84 VELO sensors have been expose d to a range of fluences up to a maximum value of approximately $rm{45 times 10^{12},1,MeV}$ neutron equivalent ($rm{1,MeV,n_{eq}}$). At the operational sensor temperature of approximately $-7,^{circ}rm{C}$, the average rate of sensor current increase is $18,upmurm{A}$ per $rm{fb^{-1}}$, in excellent agreement with predictions. The silicon effective bandgap has been determined using current versus temperature scan data after irradiation, with an average value of $E_{g}=1.16pm0.03pm0.04,rm{eV}$ obtained. The first observation of n-on-n sensor type inversion at the LHC has been made, occurring at a fluence of around $15 times 10 ^{12}$ of $1,rm{MeV,n_{eq}}$. The only n-on-p sensors in use at the LHC have also been studied. With an initial fluence of approximately $rm{3 times 10^{12},1,MeV,n_{eq}}$, a decrease in the Effective Depletion Voltage (EDV) of around 25,V is observed, attributed to oxygen induced removal of boron interstitial sites. Following this initial decrease, the EDV increases at a comparable rate to the type inverted n-on-n type sensors, with rates of $(1.43pm 0.16) times 10 ^{-12},rm{V} / , 1 , rm{MeV,n_{eq}}$ and $(1.35pm 0.25) times 10 ^{-12},rm{V} / , 1 , rm{MeV,n_{eq}}$ measured for n-on-p and n-on-n type sensors, respectively. A reduction in the charge collection efficiency due to an unexpected effect involving the second metal layer readout lines is observed.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا