اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدPicosecond dynamics of hot carriers and phonons and scintillator non-proportionality
118
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We have developed a model describing the non-proportional response in scintillators based on non-thermalised carrier and phonon transport. We show that the thermalization of e-h distributions produced in scintillators immediately after photon absorption may take longer than the period over which the non-proportional signal forms. The carrier and LO-phonon distributions during this period remain non-degenerate at quasi-equilibrium temperatures far exceeding room temperature. We solve balance equations describing the energy exchange in a hot bipolar plasma of electrons/holes and phonons. Taking into account dynamic screening we calculate the ambipolar diffusion coefficient at all temperatures. The non-proportional light yields calculated for NaI are shown to be consistent with experimental data. We discuss the implications of a non-equilibrium model, comparing its predictions with a model based on the transport of thermalised carriers. Finally, evidence for non-equilibrium effects is suggested by the shape of non-proportionality curve and wide dispersion in data observed in K-dip spectroscopy near the threshold. A comparison of the predicted curves shows good agreement for deformation potential value in the range 7-8 eV.
قيم البحث
اقرأ أيضاً
We measure and explain scintillator non-proportionality and gamma quenching of CaWO4 at low energies and low temperatures. Phonons that are created following an interaction in the scintillating crystal at temperatures of 15mK are used for a calorimet
ric measurement of the deposited energy, and the scintillation light is measured with a separate cryogenic light detector. Making use of radioactivity intrinsic to the scintillating crystal, the scintillator non-proportionality is mapped out to electron energies <5keV. The observed behavior is in agreement with a simple model based on Birks law and the stopping power dE/dx for electrons. We find for Birks constant $k_B=(18.5pm0.7)$nm/keV in CaWO4. Gamma lines allow a measurement of the reduced light yield of photons with respect to electrons, as expected in the presence of scintillator non-proportionality. In particular, we show that gamma-induced events in CaWO4 give only about 90 percent of the light yield of electrons, at energies between 40keV and 80keV.
Ultrafast dynamics of graphite is investigated by time-resolved photoemission spectroscopy. We observe spectral features of direct photoexcitations, non-thermal electron distributions, and recovery dynamics occurring with two time scales having disti
nct pump-power dependences. Additionally, we find an anomalous increase of the spectral intensity around the Fermi level, and we attribute this to spectral broadenings due to coupled optical phonons in the transient. The fingerprints of the coupled optical phonons occur from the temporal region where the electronic temperature is still not definable. This implies that there is a mechanism of ultrafast-and-efficient phonon generations beyond a two-temperature model.
First-principles calculations combining density functional theory and many-body perturbation theory can provide microscopic insight into the dynamics of electrons and phonons in materials. We review this theoretical and computational framework, focus
ing on perturbative treatments of scattering, dynamics and transport of coupled electrons and phonons. We discuss application of these first-principles calculations to electronics, lighting, spectroscopy and renewable energy.
Many linked processes occur concurrently in strongly excited semiconductors, such as interband and intraband absorption, scattering of electrons and holes by the heated lattice, Pauli blocking, bandgap renormalization and the formation of Mahan excit
ons. In this work, we disentangle their dynamics and contributions to the optical response of a ZnO thin film. Using broadband pump-probe ellipsometry, we can directly and unambiguously obtain the real and imaginary part of the transient dielectric function which we compare with first-principles simulations. We find interband and excitonic absorption partially blocked and screened by the photo-excited electron occupation of the conduction band and hole occupation of the valence band (absorption bleaching). Exciton absorption turns spectrally narrower upon pumping and sustains the Mott transition, indicating Mahan excitons. Simultaneously, intra-valence-band transitions occur at sub-picosecond time scales after holes scatter to the edge of the Brillouin zone. Our results pave new ways for the understanding of non-equilibrium charge-carrier dynamics in materials by reliably distinguishing between changes in absorption coefficient and refractive index, thereby separating competing processes. This information will help to overcome the limitations of materials for high-power optical devices that owe their properties from dynamics in the ultrafast regime.
Hot electron transport of direct and scattered carriers across an epitaxial NiSi_2/n-Si(111) interface, for different NiSi_2 thickness, is studied using Ballistic Electron Emission Microscopy (BEEM). We find the BEEM transmission for the scattered ho
t electrons in NiSi_2 to be significantly lower than that for the direct hot electrons, for all thicknesses. Interestingly, the attenuation length of the scattered hot electrons is found to be twice larger than that of the direct hot electrons. The lower BEEM transmission for the scattered hot electrons is due to inelastic scattering of the injected hot holes while the larger attenuation length of the scattered hot electrons is a consequence of the differences in the energy distribution of the injected and scattered hot electrons and the increasing attenuation length, at lower energies, of the direct hot electrons in NiSi_2.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
