ترغب بنشر مسار تعليمي؟ اضغط هنا

Phase diagram of magnetic domain walls in spin valve nano-stripes

166   0   0.0 ( 0 )
 نشر من قبل Olivier Fruchart
 تاريخ النشر 2012
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We investigate numerically the transverse versus vortex phase diagram of head-to-head domain walls in Co/Cu/Py spin valve nano-stripes (Py: Permalloy), in which the Co layer is mostly single domain while the Py layer hosts the domain wall. The range of stability of the transverse wall is shifted towards larger thickness compared to single Py layers, due to a magnetostatic screening effect between the two layers. An approached analytical scaling law is derived, which reproduces faithfully the phase diagram.



قيم البحث

اقرأ أيضاً

476 - J. Sampaio , L. OBrien , D. Petit 2013
The magnetostatic interaction between magnetic domain walls (DWs) in adjacent nanotracks has been shown to produce strong inter-DW coupling and mutual pinning. In this paper, we have used electrical measurements of adjacent spin-valve nanotracks to f ollow the positions of interacting DWs. We show that the magnetostatic interaction between DWs causes not only mutual pinning, as observed till now, but that a travelling DW can also induce the depinning of DWs in near-by tracks. These effects may have great implications for some proposed high density magnetic devices (e.g. racetrack memory, DW logic circuits, or DW-based MRAM).
We predict a fast domain wall (DW) motion induced by a thermal gradient across a nanoscopic ferromagnetic stripe of MnBi. The driving mechanism is an exchange torque fueled by magnon accumulation at the DWs. Depending on the thickness of the sample, both hot-to-cold and cold-to-hot DW motion directions are possible. The finding unveils an energy efficient way to manipulate DWs as an essential element in magnetic information processing such as racetrack memory.
The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high controllability of t he motion of geometrically constrained DWs for the manipulation of individual nanoparticles on a chip with an active control of position at the nanometer scale. The proposed method exploits the fact that magnetic nanoparticles in solution can be captured by a DW, whose position can be manipulated with nanometric accuracy in a specifically designed magnetic nanowire structure. We show that the high control over DW nucleation, displacement, and annihilation processes in such structures can be used to capture, transport and release magnetic nanoparticles. As magnetic particles with functionalized surfaces are commonly used as molecule labels in several applications - including single molecule manipulation, separation, cells manipulation and biomagnetic sensing, the accurate control over the handling of the single magnetic nanoparticles becomes crucial as it may reflect the handling of the single molecules. The approach described here opens the path to the implementation and design of nano-transport lines, with application to single molecule study and lab-on-chip devices. In perspective, the easy integration on chip with sensors of domain walls and particles will allow for the realization of programmable circuits for molecular manipulation with continuous control of the desired process.
The motion of magnetic domain walls in ultrathin magnetic heterostructures driven by current via the spin Hall torque is described. We show results from perpendicularly magnetized CoFeB|MgO heterostructures with various heavy metal underlayers. The d omain wall moves along or against the current flow depending on the underlayer material. The direction to which the domain wall moves is associated with the chirality of the domain wall spiral formed in these heterostructures. The one-dimensional model is used to describe the experimental results and extract parameters such as the Dzyaloshinskii-Moriya exchange constant which is responsible for the formation of the domain wall spiral. Fascinating effects arising from the control of interfaces in magnetic heterostructures are described.
129 - Z.V. Gareeva , A.K. Zvezdin 2010
The behavior of antiferromagnetic domain wall (ADW) against the background of a periodic ferroelectric domain structure has been investigated. It has been shown that the structure and the energy of ADW change due to the interaction with a ferroelectr ic domain structure. The ferroelectric domain boundaries play the role of pins for magnetic spins, the spin density changes in the vicinity of ferroelectric walls. The ADW energy becomes a periodical function on a coordinate which is the position of ADW relative to the ferroelectric domain structure. It has been shown that the energy of the magnetic domain wall attains minimum values when the center of the ADW coincides with the ferroelectric wall and the periodic ferroelectric structure creates periodic coercitivity for the ADW. The neighbouring equilibrium states of the ADW are separated by a finite potential barrier.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا