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تسجيل مستخدم جديدUnraveling quantum Hall breakdown in bilayer graphene with scanning gate microscopy
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We use low-temperature scanning gate microscopy (SGM) to investigate the breakdown of the quantum Hall regime in an exfoliated bilayer graphene flake. SGM images captured during breakdown exhibit intricate patterns of hotspots where the conductance is strongly affected by the presence of the tip. Our results are well described by a model based on quantum percolation which relates the points of high responsivity to tip-induced scattering between localized Landau levels.
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We use Scanning Gate Microscopy to demonstrate the presence of localized states arising from potential inhomogeneities in a 50nm-wide, gate-defined conducting channel in encapsulated bilayer graphene. When imaging the channel conductance under the in
fluence of a local tip-induced potential, we observe ellipses of enhanced conductance as a function of the tip position. These ellipses allow us to infer the location of the localized states and to study their dependence on the displacement field. For large displacement fields, we observe that localized states tend to occur halfway into the channel. All our observations can be well explained within the framework of stochastic Coulomb blockade.
Breakdown of the quantum Hall effect (QHE) is commonly associated with an electric field approaching the inter Landau-level (LL) Zener field, ratio of the Landau gap and cyclotron radius. Eluded in semiconducting heterostructures, in spite of extensi
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