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تسجيل مستخدم جديدNon-volatile Complementary Resistive Switch-based Content Addressable Memory
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This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic$rightarrow$ON state transition that enables this novel CRS application.
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