اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدPhase-separated high-temperature-annealed (Ga,Mn)As: A negative charge-transfer-energy material
265
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The approximate location in the Zaanen-Sawatzky-Allen diagram of the phase-separated (Ga,Mn)As material, consisting of MnAs nanoclusters embedded in GaAs, is determined on the basis of configuration-interaction (CI) cluster-model analysis of their Mn 2p core-level photoemission. The composite material is found to belong to the special class of materials with negative charge-transfer energy (delta). As such, its metallic or insulating/semiconducting behavior depends on the strength of the p-d hybridization (affected by strain) relative to the (size-dependent) p-bandwidth. Whereas internal strain in the embedded clusters counteracts gap opening, a metal-to-semiconductor transition is expected to occur for decreasing cluster size, associated to the opening of a small gap of p-p type (covalent gap). The electronic properties of homogeneous and phase-separated (Ga,Mn)As materials are analyzed, with emphasis on the nature of their metal-insulator transitions.
قيم البحث
اقرأ أيضاً
We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman scattering) show
that the higher ferromagnetic transition temperature results from an enhanced free hole density. The data also indicate that, in addition to the carrier concentration, the sample thickness limits the maximum attainable Curie temperature in this material - suggesting that the free surface of Ga1-xMnxAs epilayers is important in determining their physical properties.
We study the effects of growth temperature, Ga:As ratio and post-growth annealing procedure on the Curie temperature, Tc, of (Ga,Mn)As layers grown by molecular beam epitaxy. We achieve the highest Tc values for growth temperatures very close to the
2D-3D phase boundary. The increase in Tc, due to the removal of interstitial Mn by post growth annealing, is counteracted by a second process which reduces Tc and which is more effective at higher annealing temperatures. Our results show that it is necessary to optimize the growth parameters and post growth annealing procedure to obtain the highest Tc.
The newly discovered topological Dirac semimetals host the possibilities of various topological phase transitions through the control of spin-orbit coupling as well as symmetries and dimensionalities. Here, we report a magnetotransport study of high-
mobility (Cd1-xZnx)3As2 films, where the topological Dirac semimetal phase can be turned into a trivial insulator via chemical substitution. By high-field measurements with a Hall-bar geometry, magnetoresistance components ascribed to the chiral charge pumping have been distinguished from other extrinsic effects. The negative magnetoresistance exhibits a clear suppression upon Zn doping, reflecting decreasing Berry curvature of the band structure as the topological phase transition is induced by reducing the spin-orbit coupling.
The spin-crossover in organometallic molecules constitutes one of the most promising routes towards the realization of molecular spintronic devices. In this article, we explore the hybridization-induced spin-crossover in metal-organic complexes. We p
ropose a minimal many-body model that captures the essence of the spin-state switching in a generic parameter space, thus providing insight into the underlying physics. Combining the model with density functional theory (DFT), we then study the spin-crossover in isomeric structures of Ni-porphyrin (Ni-TPP). We show that metal-ligand charge transfer plays a crucial role in the determination of the spin-state in Ni-TPP. Finally, we propose a spin-crossover mechanism based on mechanical strain, which does not require a switch between isomeric structures.
This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy ter
ms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all medium doped (Ga,Mn)As layers typically used in transport measurement, with the amplitude of these uniaxial terms being characteristic of the individual layers.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
