اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدNanobeam Photonic Crystal Cavity Light-Emitting Diodes
142
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We present results on electrically driven nanobeam photonic crystal cavities formed out of a lateral p-i-n junction in gallium arsenide. Despite their small conducting dimensions, nanobeams have robust electrical properties with high current densities possible at low drive powers. Much like their two-dimensional counterparts, the nanobeam cavities exhibit bright electroluminescence at room temperature from embedded 1,250 nm InAs quantum dots. A small room temperature differential gain is observed in the cavities with minor beam self-heating suggesting that lasing is possible. These results open the door for efficient electrical control of active nanobeam cavities for diverse nanophotonic applications.
قيم البحث
اقرأ أيضاً
We describe the design, fabrication, and spectroscopy of coupled, high Quality (Q) factor silicon nanobeam photonic crystal cavities. We show that the single nanobeam cavity modes are coupled into even and odd superposition modes, and we simulate the
frequency and Q factor as a function of nanobeam spacing, demonstrating that a differential wavelength shift of 70 nm between the two modes is possible while maintaining Q factors greater than 10^6. For both on-substrate and free-standing nanobeams, we experimentally monitor the response of the even mode as the gap is varied, and measure Q factors as high as 200,000.
Wavelength-scale, high Q-factor photonic crystal cavities have emerged as a platform of choice for on-chip manipulation of optical signals, with applications ranging from low-power optical signal processing and cavity quantum electrodynamics, to bioc
hemical sensing. Many of these applications, however, are limited by the fabrication tolerances and the inability to precisely control the resonant wavelength of fabricated structures. Various techniques for post-fabrication wavelength trimming and dynamical wavelength control -- using, for example, thermal effects, free carrier injection, low temperature gas condensation, and immersion in fluids -- have been explored. However, these methods are often limited by small tuning ranges, high power consumption, or the inability to tune continuously or reversibly. In this letter, by combining nano-electro-mechanical systems (NEMS) and nanophotonics, we demonstrate reconfigurable photonic crystal nanobeam cavities that can be continuously and dynamically tuned using electrostatic forces. A tuning of ~10 nm has been demonstrated with less than 6 V of external bias and negligible steady-state power consumption.
We investigate the design, fabrication and experimental characterization of high Quality factor photonic crystal nanobeam cavities in silicon. Using a five-hole tapered 1D photonic crystal mirror and precise control of the cavity length, we designed
cavities with theoretical Quality factors as high as 14 million. By detecting the cross-polarized resonantly scattered light from a normally incident laser beam, we measure a Quality factor of nearly 750,000. The effect of cavity size on mode frequency and Quality factor was simulated and then verified experimentally.
We report a valley photonic crystal (VPhC) waveguide in a GaAs slab with InAs quantum dots (QDs) as an internal light source exploited for experimental characterization of the waveguide. A topological interface state formed at the interface between t
wo topologically-distinct VPhCs is used as the waveguide mode. We demonstrate robust propagation for near-infrared light emitted from the QDs even under the presence of sharp bends as a consequence of the topological protection of the guided mode. Our work will be of importance for developing robust photonic integrated circuits with small footprints, as well as for exploring active semiconductor topological photonics.
We experimentally demonstrate high Quality factor dual-polarized TE-TM photonic crystal nanobeam cavities. The free-standing nanobeams are fabricated in a 500 nm thick silicon layer, and are probed using both tapered optical fiber and free-space reso
nant scattering set-ups. We measure Q-factors greater than 10^4 for both TM and TE modes, and observe large fiber transmission drops (0.3 -- 0.4) at the TM mode resonances.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
