اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدLow-temperature photocarrier dynamics in monolayer MoS2
218
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The band structure of MoS$_2$ strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS$_2$. Single-layer MoS$_2$ therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescence measurements on single-layer MoS$_2$ flakes prepared by exfoliation. We observe the emergence of two distinct photoluminescence peaks at low temperatures. The photocarrier recombination at low temperatures occurs on the few-picosecond timescale, but with increasing temperatures, a biexponential photoluminescence decay with a longer-lived component is observed.
قيم البحث
اقرأ أيضاً
The coupled nonequilibrium dynamics of electrons and phonons in monolayer MoS2 is investigated by combining first-principles calculations of the electron-phonon and phonon-phonon interaction with the time-dependent Boltzmann equation. Strict phase-sp
ace constraints in the electron-phonon scattering are found to influence profoundly the decay path of excited electrons and holes, restricting the emission of phonons to crystal momenta close to few high-symmetry points in the Brillouin zone. As a result of momentum selectivity in the phonon emission, the nonequilibrium lattice dynamics is characterized by the emergence of a highly-anisotropic population of phonons in reciprocal space, which persists for up to 10 ps until thermal equilibrium is restored by phonon-phonon scattering. Achieving control of the nonequilibrium dynamics of the lattice may provide unexplored opportunities to selectively enhance the phonon population of two-dimensional crystals and, thereby, transiently tailor electron-phonon interactions over sub-picosecond time scales.
The strong Coulomb forces in monolayer transition metal dichalcogenides ensure that optical excitation of band electrons gives rise to Wannier-Mott excitonic states, each of which can be conceptualized as a composite of a Gaussian wavepacket correspo
nding to center-of-mass motion and an orbital state corresponding to the motion of the electron and hole about the center-of-mass. Here, we show that at low temperature in monolayer MoS2, given quasi-localized excitons and consequently a significant inter-exciton spacing, the excitons undergo dipole-dipole interaction and annihilate one another in a manner analogous to Auger recombination. To construct our model, we assume that each exciton is localized in a region whose length is on the same scale as the excitonic diameter, thus causing the exciton to behave in a fermionic manner, while the distance between neighboring excitons is much larger than the exciton diameter. We construct the orbital ladder operators for each exciton and apply Fermis Golden Rule to derive the overall recombination rate as a function of exciton density.
Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source
precursor synthesis of continuous monolayer (1L) MoS$_2$ films at 560 C in 50 min, within the 450-to-600 C, 2 h thermal budget window required for back-end-of-the-line compatibility with modern silicon technology. Transistor measurements reveal on-state current up to ~140 $mathrm{{mu}A/{mu}m}$ at 1 V drain-to-source voltage for 100 nm channel lengths, the highest reported to date for 1L MoS$_2$ grown below 600 C using solid-source precursors. The effective mobility from transfer length method test structures is $mathrm{29 pm 5 cm^2V^{-1}s^{-1}}$ at $mathrm{6.1 times 10^{12} cm^{-2}}$ electron density, which is comparable to mobilities reported from films grown at higher temperatures. The results of this work provide a path toward the realization of high-quality, thermal-budget-compatible 2D semiconductors for heterogeneous integration with silicon manufacturing.
Van der Waals (vdW) heterostructures constructed with two-dimensional (2D) materials have attracted great interests, due to their fascinating properties and potential for novel applications. While earlier efforts have advanced the understanding of th
e ultrafast cross-layer charge transfer process in 2D heterostructures, mechanisms for the interfacial photocarrier recombination remain, to a large extent, unclear. Here, we investigate a heterostructure comprised of black phosphorus (BP) and molybdenum disulfide (MoS2), with a type-II band alignment. Interestingly, it is found that the photo-generated electrons in MoS2 (transferred from BP) exhibit an ultrafast lifetime of about 5 ps, significantly shorter than those of the constituent materials. By corroborating with the relaxation of photo-excited holes in BP, it is revealed that the ultrafast time constant is as a result of efficient Langevin recombination, where the high hole mobility of BP facilitates a large recombination coefficient (approximately 2x10^-10 m^2/s). In addition, broadband transient absorption spectroscopy confirms that the hot electrons transferred to MoS2 distribute over a broad energy range following an ultrafast thermalization. The rate of the interlayer Langevin recombination is found to exhibit no energy level dependence. Our findings provide essential insights into the fundamental photo-physics in type-II 2D heterostructures, and also provide useful guidelines for customizing photocarrier lifetimes of BP for high-speed photo-sensitive devices.
We show that the lack of inversion symmetry in monolayer MoS2 allows strong optical second harmonic generation. Second harmonic of an 810-nm pulse is generated in a mechanically exfoliated monolayer, with a nonlinear susceptibility on the order of 1E
-7 m/V. The susceptibility reduces by a factor of seven in trilayers, and by about two orders of magnitude in even layers. A proof-of-principle second harmonic microscopy measurement is performed on samples grown by chemical vapor deposition, which illustrates potential applications of this effect in fast and non-invasive detection of crystalline orientation, thickness uniformity, layer stacking, and single-crystal domain size of atomically thin films of MoS2 and similar materials.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
