اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدCharge and Spin Reconstruction in Quantum Hall Strips
197
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We study the effect of electron-electron interactions on the charge and spin structures of a Quantum Hall strip in a triangularly confined potential. We find that the strip undergoes a spin-unpolarized to spin-polarized transition as a function of magnetic field perpendicular to the strip. For sharp confinements the spin-polarization transition is spontaneous and first develops at the softer side of the triangular potential which shows up as an eye-structure in the electron dispersion. For sufficiently weak confinements this spin-polarization transition is preceded by a charge reconstruction of a single spin species, which creates a spin-polarized strip of electrons with a width of the order of the magnetic length detached from the rest of the system. Relevance of our findings to the recent momentum resolved tunneling experiments is also discussed.
قيم البحث
اقرأ أيضاً
We show that correlated two-particle backscattering can induce fractional charge oscillations in a quantum dot built at the edge of a two-dimensional topological insulator by means of magnetic barriers. The result nicely complements recent works wher
e the fractional oscillations were obtained employing of semiclassical treatments. Moreover, since by rotating the magnetization of the barriers a fractional charge can be trapped in the dot via the Jackiw-Rebbi mechanism, the system we analyze offers the opportunity to study the interplay between this noninteracting charge fractionalization and the fractionalization due to two-particle backscattering. In this context, we demonstrate that the number of fractional oscillations of the charge density depends on the magnetization angle. Finally, we address the renormalization induced by two-particle backscattering on the spin density, which is characterized by a dominant oscillation, sensitive to the Jackiw-Rebbi charge, with a wavelength twice as large as the charge density oscillations.
The fabrication of bismuthene on top of SiC paved the way for substrate engineering of room temperature quantum spin Hall insulators made of group V atoms. We perform large-scale quantum transport calculations in these 2d materials to analyse the ric
h phenomenology that arises from the interplay between topology, disorder, valley and spin degrees of freedom. For this purpose, we consider a minimal multi-orbital real-space tight-binding hamiltonian and use a Chebyshev polynomial expansion technique. We discuss how the quantum spin Hall states are affected by disorder, sublattice resolved potential and Rashba spin-orbit coupling.
Using Subsurface Charge Accumulation scanning microscopy we image strips of low compressibility corresponding to several integer Quantum Hall filling factors. We study in detail the strips at Landau level filling factors $ u =$ 2 and 4. The observed
strips appear significantly wider than predicted by theory. We present a model accounting for the discrepancy by considering a disorder-induced nonzero density of states in the cyclotron gap.
We use dynamic scanning capacitance microscopy (DSCM) to image compressible and incompressible strips at the edge of a Hall bar in a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. This method gives access to the complex
local conductance, Gts, between a sharp metallic tip scanned across the sample surface and ground, comprising the complex sample conductance. Near integer filling factors we observe a bright stripe along the sample edge in the imaginary part of Gts. The simultaneously recorded real part exhibits a sharp peak at the boundary between the sample interior and the stripe observed in the imaginary part. The features are periodic in the inverse magnetic field and consistent with compressible and incompressible strips forming at the sample edge. For currents larger than the critical current of the QHE break-down the stripes vanish sharply and a homogeneous signal is recovered, similar to zero magnetic field. Our experiments directly illustrate the formation and a variety of properties of the conceptually important QHE edge states at the physical edge of a 2DEG.
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing
activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with $B$ and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density $eB/h$ across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 $mu$eV/10$^{11}$cm$^{-2}$, consistent with theoretical predictions for near-perfect quantum well top interfaces.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
