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We present a quantitative study of the current-voltage characteristics (CVC) of diffusive superconductor/ insulator/ ferromagnet/ superconductor (SIFS) tunnel Josephson junctions. In order to obtain the CVC we calculate the density of states (DOS) in the F/S bilayer for arbitrary length of the ferromagnetic layer, using quasiclassical theory. For a ferromagnetic layer thickness larger than the characteristic penetration depth of the superconducting condensate into the F layer, we find an analytical expression which agrees with the DOS obtained from a self-consistent numerical method. We discuss general properties of the DOS and its dependence on the parameters of the ferromagnetic layer. In particular we focus our analysis on the DOS oscillations at the Fermi energy. Using the numerically obtained DOS we calculate the corresponding CVC and discuss their properties. Finally, we use CVC to calculate the macroscopic quantum tunneling (MQT) escape rate for the current biased SIFS junctions by taking into account the dissipative correction due to the quasiparticle tunneling. We show that the influence of the quasiparticle dissipation on the macroscopic quantum dynamics of SIFS junctions is small, which is an advantage of SIFS junctions for superconducting qubits applications.
The dependence of the critical current density j_c on the ferromagnetic interlayer thickness d_F was determined for Nb/Al_2O_3/Cu/Ni/Nb Josephson tunnel junctions with ferromagnetic Ni interlayer from very thin film thicknesses (sim 1 nm) upwards and
We investigate superconductor/insulator/ferromagnet/superconductor (SIFS) tunnel Josephson junctions in the dirty limit, using the quasiclassical theory. We formulate a quantitative model describing the oscillations of critical current as a function
We investigate heat and charge transport through a diffusive SIF1F2N tunnel junction, where N (S) is a normal (superconducting) electrode, I is an insulator layer and F1,2 are two ferromagnets with arbitrary direction of magnetization. The flow of an
We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the assumption that
We fabricated high quality Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Using a ferromagnetic layer with a step-like thickness, we obtain a 0-pi junction, with equal lengths and critic