ﻻ يوجد ملخص باللغة العربية
We present an analytical study of the Dyakonov-Perel spin relaxation time for degenerate electrons in a photo-excited electron-hole liquid in intrinsic semiconductors exhibiting a spin-split band structure. The Dyakonov-Perel spin relaxation of electrons in these materials is controlled by electron-hole scattering, with small corrections from electron-electron scattering and virtually none from electron-impurity scattering. We derive simple expressions (one-dimensional and two-dimensional integrals respectively) for the effective electron-hole and electron-electron scattering rates which enter the spin relaxation time calculation. The electron-hole scattering rate is found to be comparable to the scattering rates from impurities in the electron liquid - a common model for n-type doped semiconductors. As the density of electron-hole pairs decreases (within the degenerate regime), a strong enhancement of the scattering rates and a corresponding slowing down of spin relaxation is predicted due to exchange and correlation effects in the electron-hole liquid. In the opposite limit of high density, the original Dyakonov-Perel model fails due to decreasing scattering rates and is eventually superseded by free precession of individual quasiparticle spins.
Optical pump-probe measurements of spin-dynamics at temperatures down to 1.5K are described for a series of (001)-oriented GaAs/AlGaAs quantum well samples containing high mobility two-dimensional electron gases (2DEGs). For well widths ranging from
Spin dephasing by the Dyakonov-Perel mechanism in metallic films deposited on insulating substrates is revealed, and quantitatively examined by means of density functional calculations combined with a kinetic equation. The surface-to-substrate asymme
Monolayers of group 6 transition metal dichalcogenides are promising candidates for future spin-, valley-, and charge-based applications. Quantum transport in these materials reflects a complex interplay between real spin and pseudo-spin (valley) rel
We consider the possibility of formation of a superconductivity state either in a semiconductor or in a electron-hole plasma with the degenerate electrons due to the attractive forces between the electrons as a result of the exchange effects through
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc blende semicond