ﻻ يوجد ملخص باللغة العربية
When interacting two-dimensional electrons are placed in a large perpendicular magnetic field, to minimize their energy, they capture an even number of flux quanta and create new particles called composite fermions (CFs). These complex electron-flux-bound states offer an elegant explanation for the fractional quantum Hall effect. Furthermore, thanks to the flux attachment, the effective field vanishes at a half-filled Landau level and CFs exhibit Fermi-liquid-like properties, similar to their zero-field electron counterparts. However, being solely influenced by interactions, CFs should possess no memory whatever of the electron parameters. Here we address a fundamental question: Does an anisotropy of the electron effective mass and Fermi surface (FS) survive composite fermionization? We measure the resistance of CFs in AlAs quantum wells where electrons occupy an elliptical FS with large eccentricity and anisotropic effective mass. Similar to their electron counterparts, CFs also exhibit anisotropic transport, suggesting an anisotropy of CF effective mass and FS.
There has been a surge of recent interest in the role of anisotropy in interaction-induced phenomena in two-dimensional (2D) charged carrier systems. A fundamental question is how an anisotropy in the energy-band structure of the carriers at zero mag
We develop a phenomenological description of the nu=5/2 quantum Hall state in which the Halperin-Lee-Read theory of the half-filled Landau level is combined with a p-wave pairing interaction between composite fermions (CFs). The electromagnetic respo
Composite fermions in fractional quantum Hall (FQH) systems are believed to form a Fermi sea of weakly interacting particles at half filling $ u=1/2$. Recently, it was proposed (D. T. Son, Phys. Rev. X 5, 031027 (2015)) that these composite fermions
We present the first experimental study of mesoscopic fluctuations of Coulomb drag in a system with two layers of composite fermions, which are seen when either the magnetic field or carrier concentration are varied. These fluctuations cause an alter
We have studied temperature dependence of both diagonal and Hall resistivity in the vicinity of $ u=1/2$. Magnetoresistance was found to be positive and almost independent of temperature: temperature enters resistivity as a logarithmic correction. At