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We determine the effective total spin $J$ of local moments formed from acceptor states bound to Mn ions in GaAs by evaluating their magnetic Chern numbers. We find that when individual Mn atoms are close to the sample surface, the total spin changes from $J = 1$ to $J = 2$, due to quenching of the acceptor orbital moment. For Mn pairs in bulk, the total $J$ depends on the pair orientation in the GaAs lattice and on the separation between the Mn atoms. We point out that Berry curvature variation as a function of local moment orientation can profoundly influence the quantum spin dynamics of these magnetic entities.
The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show t
The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, cross-like shape is observed. The spatial structure is compared with that from an enve
The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of strain, both heavy hole and light hole-based spin qubits can be design
Transport properties of GaAs/{delta}<Mn>/GaAs/IntimesGa1-timesAs/GaAs structures containing InxGa1-xAs (times {approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these str
Irradiating a semiconductor with circularly polarized light creates spin-polarized charge carriers. If the material contains atoms with non-zero nuclear spin, they interact with the electron spins via the hyperfine coupling. Here, we consider GaAs/Al