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Rectification in three-terminal graphene junctions

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 نشر من قبل Arnhild Jacobsen
 تاريخ النشر 2010
  مجال البحث فيزياء
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Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate. Changing the charge carrier type from holes to electrons results in a change of the rectification sign. At a bias < 20mV and at a temperature below 4.2K the sign and the efficiency of the rectification are governed by universal conductance fluctuations.



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