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We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffening of the G band mode, accompanied by a line narrowing, while the 2D mode energies are found to be linearly correlated with the G mode energies. We interpret this as evidence for p-type doping of the nanostructured graphene.
The excitation spectrum and the collective modes of graphene antidot lattices (GALs) are studied in the context of a $pi$-band tight-binding model. The dynamical polarizability and dielectric function are calculated within the random phase approximat
Graphene samples can have a very high carrier mobility if influences from the substrate and the environment are minimized. Embedding a graphene sheet into a heterostructure with hexagonal boron nitride (hBN) on both sides was shown to be a particular
Using low-temperature high-magnetic-field scanning tunneling microscopy and spectroscopy (STM/STS), we systematically study a graphene quantum dot (GQD) defined by a circular graphene p-p junction. Inside the GQD, we observe a series of quasi-bound s
We have used resonant Raman scattering spectroscopy to fully analyze the relative abundances of different (n,m) species in single-walled carbon nanotube samples that are metallically enriched by density gradient ultracentrifugation. Strikingly, the d
Since lattice strain and charge density affect various material properties of graphene, a reliable and efficient method is required for quantification of the two variables. While Raman spectroscopy is sensitive and non-destructive, its validity towar