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Hanle effect is ubiquitous in the study of spin-related phenomena and has been used to determine spin lifetime, precession and transport in semiconductors. Here, we report an experimental observation of anomalous Hanle effect in individual self-assembled InAs/GaAs quantum dots where we find that a sizeable photo-created electron spin polarization can be maintained in transverse fields as high as 1T until it abruptly collapses. The striking broadening of the Hanle curve by a factor of ~20 and its bistability upon reversal of the magnetic sweep direction points to a novel dynamical nuclear spin polarization mechanism where the effective nuclear magnetic field compensates the transverse applied field. This interpretation is further supported by the measurement of actual electron Zeeman splitting which exhibits an abrupt increase at the Hanle curve collapse. Strong inhomogeneous quadrupolar interactions typical for strained quantum dots are likely to play a key role in polarizing nuclear spins perpendicular to the optically injected spin orientation.
Early experiments on spin-blockaded double quantum dots revealed surprising robust, large-amplitude current oscillations in the presence of a static (dc) source-drain bias [see e.g. K. Ono, S. Tarucha, Phys. Rev. Lett. 92, 256803 (2004)]. Experimenta
The dynamics of the coupled electron-nuclear spin system is studied in an ensemble of singly-charged (In,Ga)As/GaAs quantum dots (QDs) using periodic optical excitation at 1 GHz repetition rate. In combination with the electron-nuclei interaction, th
In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. H
We theoretically investigate the controlled dynamic polarization of lattice nuclear spins in GaAs double quantum dots containing two electrons. Three regimes of long-term dynamics are identified, including the build up of a large difference in the Ov
We report on theoretical and experimental study of the spin polarization recovery and Hanle effect for the charge carriers interacting with the fluctuating nuclear spins in the semiconductor structures. We start the theoretical description from the s