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We report the observation of developing fractional quantum Hall states at Landau level filling factors $ u = 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The very large electric subband separation and the highly asymmetric charge distribution at which we observe these quantum Hall states, together with the fact that they disappear when the charge distribution is made symmetric, suggest that these are one-component states, possibly described by the Moore-Read Pfaffian wavefunction.
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ u=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions. The $ u=1/
The nature of the fractional quantum Hall effect at $ u=1/2$ observed in wide quantum wells almost three decades ago is still under debate. Previous studies have investigated it by the variational Monte Carlo method, which makes the assumption that t
Proposed even-denominator fractional quantum Hall effect (FQHE) states suggest the possibility of excitations with non-Abelian braid statistics. Recent experiments on wide square quantum wells observe even-denominator FQHE even under electrostatic ti
The multi-component nature of bilayer graphene (BLG), together with the ability to controllably tune between the various ground state orders, makes it a rich system in which to explore interaction driven phenomena. In the fractional quantum Hall effe
Monolayer (ML) semiconducting transition-metal dichalcogenides (TMDs) represent a unique class of two-dimensional (2D) electron systems. Their atomically thin structure -- just like graphene -- facilitates gate-tunability, while the sizable band gap