ﻻ يوجد ملخص باللغة العربية
We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tunneling, we find anomalous suppression of the current for both forward and reverse bias. We discuss possible mechanisms of the anomalous current suppression in terms of spin blockade via the QD/FM interface at the ground state of a two-electron QD.
In this perspective piece, I benchmark gallium arsenide, silicon, and germanium as material platforms for gate-defined quantum dot spin qubits. I focus on materials stacks, quantum dot architectures, bandstructure properties and qualifiers for disord
Semiconductor quantum-dot spin qubits are a promising platform for quantum computation, because they are scalable and possess long coherence times. In order to realize this full potential, however, high-fidelity information transfer mechanisms are re
Kondo-type zero-bias anomalies have been frequently observed in quantum dots occupied by two electrons and attributed to a spin-triplet configuration that may become stable under particular circumstances. Conversely, zero-bias anomalies have been so
Electron states in a inhomogeneous Ge/Si quantum dot array with groups of closely spaced quantum dots were studied by conventional continuous wave ($cw$) ESR and spin-echo methods. We find that the existence of quantum dot groups allows to increase t
We show theoretically and experimentally the existence of a new quantum interference(QI) effect between the electron-hole interactions and the scattering by a single Mn impurity. Theoretical model, including electron-valence hole correlations, the sh