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تسجيل مستخدم جديدالتأثير المغناطيسي-الفونوني بحسب عامل التعبئة في الغرافين
Filling-Factor-Dependent Magnetophonon Resonance in Graphene
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نحن نصف البنية الخاصة التي تم الحصول عليها من قبل الصوت البصري في المستوى الداخلي في الجرافين عندما يتم إحداث التوازن مع واحد من الانتقالات بين مستويات لاندو في هذا المادة. يتم تأثير هذا بشكل أكبر عندما يكون هذا الوضع اللازم (المرتبط بالطيف G في طيف رامان الجرافين) في التوازن مع الانتقالات بين مستويات لاندو 0 -> (+,1) و (-,1) -> 0 عند مجال المغناطيسي B_0 ~ 30 T. يمكن استخدامه لقياس قوة الارتباط الإلكتروني-الصوتي مباشرة، ويمكن استخدام تباينه حسب العامل التعبئة للكشف عن الأوضاع الصوتية مدورة تدويريا.
We describe a peculiar fine structure acquired by the in-plane optical phonon at the Gamma-point in graphene when it is brought into resonance with one of the inter-Landau-level transitions in this material. The effect is most pronounced when this lattice mode (associated with the G-band in graphene Raman spectrum) is in resonance with inter-Landau-level transitions 0 -> (+,1) and (-,1) -> 0, at a magnetic field B_0 ~ 30 T. It can be used to measure the strength of the electron-phonon coupling directly, and its filling-factor dependence can be used experimentally to detect circularly polarized lattice modes.
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