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We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x = 0.05, 0.08, and 0.11), grown by molecular-beam epitaxy on (0001) ZnO substrates. By tuning the built-in polarization through control of the barrier composition, the electron density was systematically varied in the range of 5.6 x 10^11 to 1.6 x 10^12 cm^-2, corresponding to a range of 3.1 < rs < 5.2, where rs is the average electron spacing measured in units of the effective Bohr radius. We used the coincidence technique, where crossings of the spin-split Landau levels occur at critical tilt angles of magnetic field, to evaluate the spin susceptibility. In addition, we determined the effective mass from the temperature dependence of the Shubnikov-de Haas oscillations measured at the coincidence conditions. The susceptibility and the effective mass both gradually increase with decreasing electron density, reflecting the role of electron-electron interaction.
We report measurements of the spin susceptibility in dilute (rs up to 10) AlAs two-dimensional (2D) electrons occupying a single conduction-band valley with an anisotropic in-plane Fermi contour, characterized by longitudinal and transverse effective
We report effective hole mass ($m^{*}$) measurements through analyzing the temperature dependence of Shubnikov-de Haas oscillations in dilute (density $p sim 7 times 10^{10}$ cm$^{-2}$, $r_{s} sim 6$) two-dimensional (2D) hole systems confined to a 2
We report measurements of the spin susceptibility in dilute two-dimensional electrons confined to a 45$AA$ wide AlAs quantum well. The electrons in this well occupy an out-of-plane conduction-band valley, rendering a system similar to two-dimensional
We evaluate the effective interactions in a fluid of electrons moving in a plane, on the approach to the quantum phase transition from the paramagnetic to the fully spin-polarized phase that has been reported from Quantum Monte Carlo runs. We use the
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $nsimeq (1-50) times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in two dimension