اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSystematic characterization of upper critical fields for MgB$_2$ thin films using the two-band superconducting theory
251
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We present experimental results of the upper critical fields $H_{rm c2}$ of various MgB$_2$ thin films prepared by the molecular beam epitaxy, multiple-targets sputtering, and co-evaporation deposition apparatus. Experimental data of the $H_{rm c2}(T)$ are successfully analyzed by applying the Gurevich theory of dirty two-band superconductivity in the case of $D_{pi}/D_{sigma}>1$, where $D_{pi}$ and $D_{sigma}$ are the intraband electron diffusivities for $pi$ and $sigma$ bands, respectively. We find that the parameters obtained from the analysis are strongly correlated to the superconducting transition temperature $T_{rm c}$ of the films. We also discuss the anormalous narrowing of the transition width at intermediate temperatures confirmed by the magnetoresistance measurements.
قيم البحث
اقرأ أيضاً
Critical fields of four MgB2 thin films with a normal state resistivity ranging from 5 to 50 mWcm and Tc from 29.5 to 38.8 K were measured up to 28 T. Hc2(T) curves present a linear behavior towards low temperatures. Very high critical field values h
ave been found, up to 24 T along the c-axis and 57 T in the basal plane not depending on the normal state resistivity values. In this paper, critical fields will be analyzed taking into account the multiband nature of MgB2; we will show that resistivity and upper critical fields can be ascribed to different scattering mechanisms.
We investigate the influence of carbon-ion irradiation on the superconducting critical properties of MgB$_2$ thin films. MgB$_2$ films of two thicknesses viz. 400 nm (MB400nm) and 800 nm (MB800nm) were irradiated by 350 keV C ions having a wide range
of fluence, 1 x 10$^{13}$ - 1 x 10$^{15}$ C atoms/cm$^2$. The mean projected range ($R_p$) of 350 keV C ions in MgB$_2$ is 560 nm, thus the energetic C ions will pass through the MB400nm, whereas the ions will remain into the MB800nm. The superconducting transition temperature ($T_c$), upper critical field ($H_{c2}$), $c$-axis lattice parameter, and corrected residual resistivity ($rho_{corr}$) of both the films showed similar trends with the variation of fluence. However, a disparate behavior in the superconducting phase transition was observed in the MB800nm when the fluence was larger than 1 x 10$^{14}$ C atoms/cm$^2$ because of the different Tcs between the irradiated and non-irradiated parts of the film. Interestingly, the superconducting critical properties, such as $T_c$, $H_{c2}$, and $J_c$, of the irradiated MgB$_2$ films, as well as the lattice parameter, were almost restored to those in the pristine state after a thermal annealing procedure. These results demonstrate that the atomic lattice distortion induced by C-ion irradiation is the main reason for the change in the superconducting properties of MgB$_2$ films.
We studied the specific heat and thermal conductivity of the spin-triplet superconductor Sr2RuO4 at low temperatures and under oriented magnetic fields H. We resolved a double peak structure of the superconducting transition under magnetic field for
the first time, which provides thermodynamic evidence for the existence of multiple superconducting phases. We also found a clear limiting of the upper critical field Hc2 for the field direction parallel to the RuO2 plane only within 2 degrees. The limiting of Hc2 occurs in the same H-T domain of the second superconducting phase; we suggest that the two phenomena have the same physical origin.
The optical response of the two-band superconductor MgB$_2$ has been studied in the 0.7-4 THz range on films with very low impurity level. The effect of the high-energy $sigma$-gap is observed in the ratio $R_S/R_N$ between the normal and superconduc
ting state reflectance, while in a neutron irradiated film with a slightly higher impurity level mainly the effect of the $pi$-gap is evident as reported in previous experiments. At terahertz frequencies, the electrodynamic of MgB$_2$ can be well described by the two-band parallel conductivity model and is dominated by the $pi$-bands when the impurity level is only slightly higher than that of an ultra-clean sample.
We have carried out high-field resistivity measurements up to 27,T in EuFe$_2$As$_2$ at $P$,=,2.5,GPa, a virtually optimal pressure for the $P$-induced superconductivity, where $T_mathrm{c}$,=,30,K. The $B_mathrm{c2}-T_mathrm{c}$ phase diagram has be
en constructed in a wide temperature range with a minimum temperature of 1.6 K ($approx 0.05 times T_mathrm{c}$), for both $B parallel ab$ ($B_mathrm{c2}^mathrm{ab}$) and $B parallel c$ ($B_mathrm{c2}^mathrm{c}$). The upper critical fields $B_mathrm{c2}^mathrm{ab}$(0) and $B_mathrm{c2}^mathrm{c}$(0), determined by the onset of resistive transitions, are 25 T and 22 T, respectively, which are significantly smaller than those of other Fe-based superconductors with similar values of $T_mathrm{c}$. The small $B_mathrm{c2}(0)$ values and the $B_mathrm{c2}(T)$ curves with positive curvature around 20 K can be explained by a multiple pair-breaking model that includes the exchange field due to the magnetic Eu$^{2+}$ moments. The anisotropy parameter, $Gamma=B_mathrm{c2}^{ab}/B_mathrm{c2}^{c}$, in EuFe$_2$As$_2$ at low temperatures is comparable to that of other 122 Fe-based systems.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
