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تسجيل مستخدم جديدTunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure
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In this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (001) simple and double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated. The electronic structure of the junctions is modeled by a second-nearest neighbors {it spd} tight-binding Hamiltonian parametrized to {it ab initio} calculated band structures, while the conductances and the tunneling magnetoresistance are calculated within Landauers formalism. The calculations are done at zero bias voltage and as a function of energy. We show and discuss the influence of the interface structure on the spin-dependent transport through simple and double tunnel junctions.
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We calculate the tunneling magnetoresistance (TMR) of Fe$mid$ZnSe$mid$Fe$mid$ZnSe$mid$Fe (001) double magnetic tunnel junctions as a function of the in-between Fe layers thickness, and compare these results with those of Fe$mid$ZnSe$mid$Fe simple jun
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In this work, we calculate with ab initio methods the current-voltage characteristics for ideal single- and double-barrier Fe/MgO (001) magnetic tunnel junctions. The current is calculated in the phase-coherent limit by using the recently developed S
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