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We report the single crystal growth and anisotropic magnetic properties of the tetragonal RAg$_2$Ge$_2$ (R = Pr, Nd and Sm) compounds which crystallize in the ThCr$_2$Si$_2$ type crystal structure with the space group textit{I4/mmm}. The single crystals of RAg$_2$Ge$_2$ (R = Pr, Nd and Sm) were grown by self-flux method using Ag:Ge binary alloy as flux. From the magnetic studies on single crystalline samples we have found that PrAg$_2$Ge$_2$ and NdAg$_2$Ge$_2$ order antiferromagnetically at 12 K and 2 K respectively, thus corroborating the earlier polycrystalline results. SmAg$_2$Ge$_2$ also orders antiferromagnetically at 9.2 K. The magnetic susceptibility and magnetization show a large anisotropy and the easy axis of magnetization for PrAg$_2$Ge$_2$ and NdAg$_2$Ge$_2$ is along the [100] direction where as it changes to [001] direction for SmAg$_2$Ge$_2$. Two metamagnetic transitions were observed in NdAg$_2$Ge$_2$ at $H_{rm m1}$ = 1.25 T and $H_{rm m2}$ =3.56 T for the field parallel to [100] direction where as the magnetization along [001] direction was linear indicating the hard axis of magnetization.
We report the anisotropic magnetic properties of the ternary compound ErAl$_2$Ge$_2$. Single crystals of this compound were grown by high temperature solution growth technique,using Al:Ge eutectic composition as flux. From the powder x-ray diffractio
The anisotropic magnetic properties of the antiferromagnetic compound CePd$_2$Ge$_2$, crystallizing in the tetragonal crystal structure have been investigated in detail on a single crystal grown by Czochralski method. From the electrical transport, m
We have studied the thermal conductivity $kappa$ on single crystalline samples of the antiferromagnetic monolayer cuprates R$_2$CuO$_4$ with R = La, Pr, Nd, Sm, Eu, and Gd. For a heat current within the CuO$_2$ planes, i.e. for $kappa_{ab}$ we find h
Single crystals of the LnFeAsO (Ln1111, Ln = Pr, Nd, and Sm) family with lateral dimensions up to 1 mm were grown from NaAs and KAs flux at high pressure. The crystals are of good structural quality and become superconducting when O is partially subs
High-temperature indium flux growth was applied to prepare single crystals of GdRh$_2$Si$_2$ by a modified Bridgman method leading to mm-sized single crystals with a platelet habitus. Specific heat and susceptibility data of GdRh$_2$Si$_2$ exhibit a