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We develop a quantum noise approach to study quantum transport through nanostructures. The nanostructures, such as quantum dots, are regarded as artificial atoms, subject to quasi-equilibrium fermionic reservoirs of electrons in biased leads. Noise operators characterizing the quantum fluctuation in the reservoirs are related to the damping and fluctuation of the artificial atoms through the quantum Langevin equation. The average current and current noise are derived in terms of the reservoir noise correlations. In the white-noise limit, we show that the current and current noise can be exactly calculated by the quantum noise approach, even in the presence of interaction such as Coulomb blockade. As a typical application, the average current and current noise through a single quantum dot are studied.
We analyze the equilibrium and non-equilibrium frequency-dependent spin current noise and spin conductance through a quantum dot in the local moment regime. Spin current correlations are shown to behave markedly differently from charge correlations:
We study shot noise in tunneling current through a double quantum dot connected to two electric leads. We derive two master equations in the occupation-state basis and the eigenstate basis to describe the electron dynamics. The approach based on the
We theoretically investigate transport signatures of quantum interference in highly symmetric double quantum dots in a parallel geometry and demonstrate that extremely weak symmetry-breaking effects can have a dramatic influence on the current. Our c
Scaling of semiconductor devices has reached a stage where it has become absolutely imperative to consider the quantum mechanical aspects of transport in these ultra small devices. In these simulations, often one excludes a rigorous band structure tr
We investigate the propagation of spin impurity atoms through a strongly interacting one-dimensional Bose gas. The initially well localized impurities are accelerated by a constant force, very much analogous to electrons subject to a bias voltage, an