اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدArchitecture for Integrated Mems Resonators Quality Factor Measurement
200
0
0.0
(
0
)
نشر من قبل
EDA Publishing Association
تاريخ النشر
2008
مجال البحث
الهندسة المعلوماتية
والبحث باللغة
English
تأليف
H. Mathias
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
In this paper, an architecture designed for electrical measurement of the quality factor of MEMS resonators is proposed. An estimation of the measurement performance is made using PSPICE simulations taking into account the components non-idealities. An error on the measured Q value of only several percent is achievable, at a small integration cost, for sufficiently high quality factor values (Q > 100).
قيم البحث
اقرأ أيضاً
A new Room Temperature (RT) 0-level vacuum package is demonstrated in this work, using amorphous silicon (aSi) as sacrificial layer and SiO2 as structural layer. The process is compatible with most of MEMS resonators and Resonant Suspended-Gate MOSFE
T [1] fabrication processes. This paper presents a study on the influence of releasing hole dimensions on the releasing time and hole clogging. It discusses mass production compatibility in terms of packaging stress during back-end plastic injection process. The packaging is done at room temperature making it fully compatible with IC-processed wafers and avoiding any subsequent degradation of the active devices.
A simple and fast process for micro-electromechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented in this paper. Thin SOI wafers are important for advanced CMOS technology and thus are evaluated as resonator subst
rates for future co-integration with CMOS circuitry on a single chip. As the transduction capacitance scales with the resonator thickness, it is important to fabricate deep sub-micron trenches in order to achieve a good capacitive coupling. Through the combination of conventional UV-lithography and focused ion beam (FIB) milling the process needs only two lithography steps, enabling therefore a way for fast prototyping of MEM-resonators. Different FIB parameters and etching parameters are compared in this paper and their effect on the process are reported.
Parametric amplification is an interesting way of artificially increasing a MEMS Quality factor and could be helpful in many kinds of applications. This paper presents a theoretical study of this principle, based on Matlab/Simulink simulations, and p
roposes design guidelines for parametric structures. A new device designed with this approach is presented together with the corresponding FEM simulation results.
We have observed the transversal vibration mode of suspended carbon nanotubes at millikelvin temperatures by measuring the single-electron tunneling current. The suspended nanotubes are actuated contact-free by the radio frequency electric field of a
nearby antenna; the mechanical resonance is detected in the time-averaged current through the nanotube. Sharp, gate-tuneable resonances due to the bending mode of the nanotube are observed, combining resonance frequencies of up to u_0 = 350 MHz with quality factors above Q = 10^5, much higher than previously reported results on suspended carbon nanotube resonators. The measured magnitude and temperature dependence of the Q-factor shows a remarkable agreement with the intrinsic damping predicted for a suspended carbon nanotube. By adjusting the RF power on the antenna, we find that the nanotube resonator can easily be driven into the non-linear regime.
The very significant growth of the wireless communication industry has spawned tremendous interest in the development of high performances radio frequencies (RF) components. Micro Electro Mechanical Systems (MEMS) are good candidates to allow reconfi
gurable RF functions such as filters, oscillators or antennas. This paper will focus on the MEMS electromechanical resonators which show interesting performances to replace SAW filters or quartz reference oscillators, allowing smaller integrated functions with lower power consumption. The resonant frequency depends on the material properties, such as Youngs modulus and density, and on the movable mechanical structure dimensions (beam length defined by photolithography). Thus, it is possible to obtain multi frequencies resonators on a wafer. The resonator performance (frequency, quality factor) strongly depends on the environment, like moisture or pressure, which imply the need for a vacuum package. This paper will present first resonator mechanisms and mechanical behaviors followed by state of the art descriptions with applications and specifications overview. Then MEMS resonator developments at STMicroelectronics including FEM analysis, technological developments and characterization are detailed.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
