اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدvan der Waals Interactions Between Thin Metallic Wires and Layers
155
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Quantum Monte Carlo (QMC) methods have been used to obtain accurate binding-energy data for pairs of parallel thin metallic wires and layers modeled by 1D and 2D homogeneous electron gases. We compare our QMC binding energies with results obtained within the random phase approximation, finding significant quantitative differences and disagreement over the asymptotic behavior for bilayers at low densities. We have calculated pair-correlation functions for metallic biwire and bilayer systems. Our QMC data could be used to investigate van der Waals energy functionals.
قيم البحث
اقرأ أيضاً
The van der Waals interactions between two parallel graphitic nanowiggles (GNWs) are calculated using the coupled dipole method (CDM). The CDM is an efficient and accurate approach to determine such interactions explicitly by taking into account the
discrete atomic structure. Our findings show that the van der Waals forces vary from attraction to repulsion as nanoribbons move along their lengths with respect to each other. This feature leads to a number of stable and unstable positions of the system during the movement process. These positions can be tuned by changing the length of GNW. Moreover, the influence of the thermal effect on the van der Waals interactions is also extensively investigated. This work would give good direction for both future theoretical and experimental studies.
Multiferroic materials are potential to be applied in novel magnetoelectric devices, for example, high-density non-volatile storage. Last decades, research on multiferroic materials was focused on three-dimensional (3D) materials. However, 3D materia
ls suffer from the dangling bonds and quantum tunneling in the nano-scale thin films. Two-dimensional (2D) materials might provide an elegant solution to these problems, and thus are highly on demand. Using first-principles calculations, we predict ferromagnetism and driven ferroelectricity in the monolayer and even a few-layers of CuCrP2S6. Although the total energy of the ferroelectric phase of monolayer is higher than that of the antiferroelectric phase, the ferroelectric phases can be realized by applying a large electric field. Besides the degrees of freedoms in the common multiferroic materials, the valley degree of freedom is also polarized according to our calculations. The spins, electric dipoles and valleys are coupled with each other as shown in the computational results. In experiment, we observe the out-of-plane ferroelectricity in a few-layer CuCrP2S6 (approximately 13 nm thick) at room temperature. 2D ferromagnetism of few-layers is inferred from magnetic hysteresis loops of the massively stacked nanosheets at 10 K. The experimental observations support our calculation very well. Our findings may provide a series of 2D materials for further device applications.
Three-dimensional epitaxial heterostructures are based on covalently-bonded interfaces, whereas those from 2-dimensional (2D) materials exhibit van der Waals interactions. Under the right conditions, however, material structures with mixed interfacia
l van der Waals and covalent bonding may be realized. Atomically thin layers formed at the epitaxial graphene (EG)/silicon carbide (SiC) interface indicate that EG/SiC interfaces provide this unique environment and enable synthesis of a rich palette of 2D materials not accessible with traditional techniques. Here, we demonstrate a method termed confinement heteroepitaxy (CHet), to realize air-stable, structurally unique, crystalline 2D-Ga, In, and Sn at the EG/SiC interface. The first intercalant layer is covalently-bonded to the SiC, and is accompanied by a vertical bonding gradient that ends with van der Waals interactions. Such structures break out of plane centrosymmetry, thereby introducing atomically thin, non-centrosymmetric 2D allotropes of 3D materials as a foundation for tunable superconductivity, topological states, and plasmonic properties.
Raman scattering is a ubiquitous phenomenon in light-matter interactions which reveals a materials electronic, structural and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental material propert
ies. Here, we report a novel Raman scattering process at the interface between different van der Waals (vdW) materials as well as between a monolayer semiconductor and 3D crystalline substrates. We find that interfacing a WSe2 monolayer with materials such as SiO2, sapphire, and hexagonal boron nitride (hBN) enables Raman transitions with phonons which are either traditionally inactive or weak. This Raman scattering can be amplified by nearly two orders of magnitude when a foreign phonon mode is resonantly coupled to the A exciton in WSe2 directly, or via an A1 optical phonon from WSe2. We further showed that the interfacial Raman scattering is distinct between hBN-encapsulated and hBN-sandwiched WSe2 sample geometries. This cross-platform electron-phonon coupling, as well as the sensitivity of 2D excitons to their phononic environments, will prove important in the understanding and engineering of optoelectronic devices based on vdW heterostructures.
Heterostructures of atomically thin van der Waals bonded monolayers have opened a unique platform to engineer Coulomb correlations, shaping excitonic, Mott insulating, or superconducting phases. In transition metal dichalcogenide heterostructures, el
ectrons and holes residing in different monolayers can bind into spatially indirect excitons with a strong potential for optoelectronics, valleytronics, Bose condensation, superfluidity, and moire-induced nanodot lattices. Yet these ideas require a microscopic understanding of the formation, dissociation, and thermalization dynamics of correlations including ultrafast phase transitions. Here we introduce a direct ultrafast access to Coulomb correlations between monolayers; phase-locked mid-infrared pulses allow us to measure the binding energy of interlayer excitons in WSe2/WS2 hetero-bilayers by revealing a novel 1s-2p resonance, explained by a fully quantum mechanical model. Furthermore, we trace, with subcycle time resolution, the transformation of an exciton gas photogenerated in the WSe2 layer directly into interlayer excitons. Depending on the stacking angle, intra- and interlayer species coexist on picosecond scales and the 1s-2p resonance becomes renormalized. Our work provides a direct measurement of the binding energy of interlayer excitons and opens the possibility to trace and control correlations in novel artificial materials.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
