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تسجيل مستخدم جديدStrong reduction of field-dependent microwave surface resistance in YBa$_{2}$Cu$_{3}$O$_{7-delta}$ with sub-micrometric BaZrO$_3$ inclusions
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We observe a strong reduction of the field induced thin film surface resistance measured at high microwave frequency ($ u=$47.7 GHz) in YBa$_{2}$Cu$_{3}$O$_{7-delta}$ thin films grown on SrTiO$_3$ substrates, as a consequence of the introduction of sub-micrometric BaZrO$_3$ particles. The field increase of the surface resistance is smaller by a factor of $sim$3 in the film with BaZrO$_3$ inclusions, while the zero-field properties are not much affected. Combining surface resistance and surface reactance data we conclude (a) that BaZrO$_3$ inclusions determine very deep and steep pinning wells and (b) that the pinning changes nature with respect to the pure film.
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In order to study the vortex pinning determined by artificially introduced pinning centers in the small-vortex displacement regime, we measured the microwave surface impedance at 47.7 GHz in the mixed state of YBa$_{2}$Cu$_{3}$O$_{7-delta}$ thin film
s, where sub-micrometric BaZrO$_3$ particles have been incorporated. As a function of the BaZrO$_3$ content, we observe that the absolute losses slightly decrease up to a BaZrO$_3$ content of 5%, and then increase. We found that the magnetic-field-induced losses behave differently, in that they are not monotonic with increasing BaZrO$_3$ concentration: at small concentration (2.5%) the field-induced losses increase, but large reduction of the losses themselves, by factors up to 3, is observed upon further increasing the BaZrO$_3$ concentration in the target up to 7%. Using measurements of both surface resistance and surface reactance we estimate vortex pinning-related parameters. We find that BaZrO$_3$ inclusions introduce deep and steep pinning wells. In particular, the minimum height of the energy barrier for single vortices is raised. At larger BaZrO$_3$ content (5% and 7%) the phenomenon is at its maximum, but it is unclear whether it shows a saturation or not, thus leaving room for further improvements.
We present measurements of the magnetic field dependent microwave surface resistance in laser-ablated YBa$_2$Cu$_3$O$_{7-delta}$ films on SrTiO$_3$ substrates. BaZrO$_3$ crystallites were included in the films using composite targets containing BaZrO
$_3$ inclusions with mean grain size smaller than 1 $mu$m. X-ray diffraction showed single epitaxial relationship between BaZrO$_3$ and YBa$_2$Cu$_3$O$_{7-delta}$. The effective surface resistance was measured at 47.7 GHz for 60$< T <$90 K and 0$< mu_0H <$0.8 T. The magnetic field had a very different effect on pristine YBa$_2$Cu$_3$O$_{7-delta}$ and YBa$_2$Cu$_3$O$_{7-delta}$/BaZrO$_3$, while for $mu_0H=$0 only a reduction of $T_c$ in the YBa$_2$Cu$_3$O$_{7-delta}$/BaZrO$_3$ film was observed, consistent with dc measurements. At low enough $T$, in moderate fields YBa$_2$Cu$_3$O$_{7-delta}$/BaZrO$_3$ exhibited an intrinsic thin film resistance lower than the pure film. The results clearly indicate that BaZrO$_3$ inclusions determine a strong reduction of the field-dependent surface resistance. From the analysis of the data in the framework of simple models for the microwave surface impedance in the mixed state we argue that BaZrO$_3$ inclusions determine very steep pinning potentials.
We investigate the effect of the anisotropy and of the directional pinning in YBa$_2$Cu$_3$O$_{7-x}$ films grown by pulsed laser ablation from targets containing BaZrO$_3$ at 5% mol. BaZrO$_3$ inclusions self-assemble to give nanorods oriented along
the c-axis, thus giving a preferential direction for vortex pinning. The directionality of vortex response is studied at high ac frequency with the complex microwave response at 48 GHz, as a function of the applied field and of the angle $theta$ between the field and the c-axis. The complex microwave response does not exhibit any angular scaling, suggesting that the structural anisotropy of YBa$_2$Cu$_3$O$_{7-x}$ is supplemented by at least another preferred orientation. The pinning parameter $r$ shows evidence of directional pinning, effective in a wide range of angles around the c-axis (thus ascribed to BZO nanocolumns).
YBa$_2$Cu$_3$O$_{7-delta}$ is a good candidate to systematically study high-temperature superconductivity by nanoengineering using advanced epitaxy. An essential prerequisite for these studies are coherently strained YBa$_2$Cu$_3$O$_{7-delta}$ thin f
ilms, which we present here using NdGaO$_3$ (110) as a substrate. The films are coherent up to at least 100 nm thickness and have a critical temperature of 89$pm$1 K. The $a$ and $b$ lattice parameters of the YBa$_2$Cu$_3$O$_{7-delta}$ are matched to the in-plane lattice parameters of NdGaO$_3$ (110), resulting in a large reduction of the orthorhombicity of the YBa$_2$Cu$_3$O$_{7-delta}$. These results imply that a large amount of structural disorder in the chain layers of YBa$_2$Cu$_3$O$_{7-delta}$ is not detrimental to superconductivity.
The magneto-optical imaging technique is used to visualize the penetration of the magnetic induction in YBa$_{2}$Cu$_{3}$O$_{7-delta}$ thin films during surface resistance measurements. The in-situ surface resistance measurements were performed at 7
GHz using the dielectric resonator method. When only the microwave magnetic field $H_{rf}$ is applied to the superconductor, no $H_{rf}$-induced vortex penetration is observed, even at high rf power. In contrast, in the presence of a constant magnetic field superimposed on $H_{rf}$ we observe a progression of the flux front as $H_{rf}$ is increased. A local thermometry method based on the measurement of the resonant frequency of the dielectric resonator placed on the YBa$_{2}$Cu$_{3}$O$_{7-delta}$ thin film shows that the $H_{rf}$--induced flux penetration is due to the increase of the film temperature.
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