اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدMagnetoresistance in an all-manganite heterostructure
137
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We study the magnetic and transport properties of all-manganite heterostructures consisting of ferromagnetic metallic electrodes separated by an antiferromagnetic barrier. We find that the magnetic ordering in the barrier is influenced by the relative orientation of the electrodes magnetization producing a large difference in resistance between the parallel and antiparallel orientations of the ferromagnetic layers. The external application of a magnetic field in a parallel configuration also leads to large magnetoresistance.
قيم البحث
اقرأ أيضاً
Magnetic-field (H) induced first-order magnetic transition and the assiciated electronic phase-separation phenomena are active topics of research in magnetism. Magnetoresistance (MR) is a key property to probe these phenomena and, in literature, a bu
tterfly-shaped MR loop has been noted while cycling the field, with the envelope curve lying below the virgin curve in MR versus H plots of such materials. Here, we report an opposite behavior of MR loop for an alloy, Tb4LuSi3, at low temperatures (<<20 K) in the magnetically ordered state. Such an anomalous curve reveals unexpected domination of higher resistive high-field phase in electronic conduction, unlike in other materials where conducion is naturally by low-resistive high-field phase that follows first-order transition. The observed features reveal an unusual electronic phase separation, namely involving high-resistive high-field phase and low-resistive virgin phase.
Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source wit
h a large SOT efficiency (${xi}$) and electrical conductivity (${sigma}$), and an efficient spin injection across a transparent interface. Herein, we use single crystals of the van der Waals (vdW) topological semimetal WTe$_2$ and vdW ferromagnet Fe$_3$GeTe$_2$ to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of ${xi}{approx}4.6$ and ${sigma}{approx}2.25{times}10^5 {Omega}^{-1} m^{-1}$ for WTe$_2$. Moreover, we obtain the significantly reduced switching current density of $3.90{times}10^6 A/cm^2$ at 150 K, which is an order of magnitude smaller than those of conventional heavy-metal/ ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics.
Magnetic properties of polycrystalline Sm0.1Ca0.84Sr0.06MnO3 in pristine and metastable states have been investigated in wide range of temperatures and magnetic fields. It was found that below Curie temperature TC = 105 K the pristine state exhibits
phase separation comprising ferromagnetic and antiferromagnetic phases. The metastable states with reduced magnetization were obtained by successive number of quick coolings of the sample placed in container with kerosene-oil mixture. By an increasing number of quick coolings (> 6) the long time relaxation appeared at 10 K and the magnetization reversed its sign and became strongly negative in wide temperature range, even under an applied magnetic field of 15 kOe. The observed field and temperature dependences of the magnetization in this state are reversed in comparison with the ordinary ferromagnetic ones. Above TC, the observed diamagnetic susceptibility of the reversed magnetization state at T = 120 K is ~ - 0.9 x 10-4 emu g-1 Oe-1. Only after some storage time at room temperature, the abnormal magnetic state is erasable. It is suggested that the negative magnetization observed results from a specific coupling of the nano/micro-size ferromagnetic regions with a surrounding diamagnetic matrix formed, in a puzzled way, by the repeating training (quick cooling) cycles.
In a manganite film without quenched disorder, we show texturing in the form of insulating and metallic stripes above and below Curie temperature (Tc), respectively, by high resolution scanning tunneling microscopy/spectroscopy (STM/STS). The formati
on of these stripes involves competing orbital and charge orders, and are an outcome of overlapping electron wave-functions mediated by long-range lattice strain. Contrary to popular perception, electronically homogeneous stripe phase underlines the efficacy of the lattice strain in bringing about charge density modulation and in impeding the cross-talk between the order parameters, which otherwise evolves inhomogeneously in the form of orbitally-ordered insulating and orbitally disordered metallic phases.
The behavior of the low-frequency electromagnon in multiferroic DyMnO3 has been investigated in external magnetic fields and in a magnetically ordered state. Significant softening of the electromagnon frequency is observed for external magnetic field
s parallel to the a-axis (BIIa), revealing a number of similarities to a classical soft mode behavior known for ferroelectric phase transitions. The softening of the electromagnon yields an increase of the static dielectric permittivity which follows a similar dependence as predicted by the Lyddane-Sachs-Teller relation. Within the geometry BIIb the increase of the electromagnon intensity does not correspond to the softening of the eigenfrequency. In this case the increase of the static dielectric permittivity seem to be governed by the motion of the domain walls.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
