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Using very-high mobility GaAs/AlGaAs 2D electron Hall bar samples, we have experimentally studied the photoresistance/photovoltaic oscillations induced by microwave irradiation in the regime where both 1/B and B-periodic oscillations can be observed. In the frequency range between 27 and 130 GHz we found that these two types of oscillations are decoupled from each other, consistent with the respective models that 1/B oscillations occur in bulk while the B-oscillations occur along the edges of the Hall bars. In contrast to the original report of this phenomenon (Ref. 1) the periodicity of the B-oscillations in our samples are found to be independent of L, the length of the Hall bar section between voltage measuring leads.
We study the magnetoresistance, deltarho_{xx}(B)/rho_0, of a high-mobility 2D electron gas in the domain of magnetic fields, B, intermediate between the weak localization and the Shubnikov-de Haas oscillations, where deltarho_{xx}(B)/rho_0 is governe
Electron-electron interactions give rise to the correction, deltasigma^{int}(omega), to the ac magnetoconductivity, sigma(omega), of a clean 2D electron gas that is periodic in omega_c^{-1}, where omega_c is the cyclotron frequency. Unlike convention
The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc t
In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe t
We report on the experimental observation of the quantum oscillations in microwave magnetoabsorption of a high-mobility two-dimensional electron gas induced by Landau quantization. Using original resonance-cavity technique, we observe two kinds of os