ﻻ يوجد ملخص باللغة العربية
We propose using semiconductor quantum dots for a simulation of chemical reactions as electrons are redistributed among such artificial atoms. We show that it is possible to achieve various reaction regimes and obtain different reaction products by varying the speed of voltage changes applied to the gates forming quantum dots. Considering the simplest possible reaction, $H_2+Hto H+H_2$, we show how the necessary initial state can be obtained and what voltage pulses should be applied to achieve a desirable final product. Our calculations have been performed using the Pechukas gas approach, which can be extended for more complicated reactions.
Doping of semiconductors by impurity atoms enabled their widespread technological application in micro and opto-electronics. For colloidal semiconductor nanocrystals, an emerging family of materials where size, composition and shape-control offer wid
A quantum kinetic theory is used to compute excitation induced dephasing in semiconductor quantum dots due to the Coulomb interaction with a continuum of states, such as a quantum well or a wetting layer. It is shown that a frequency dependent broade
A dielectric vertical cavity is used to study the spin dynamics of molecularly self-assembled colloidal CdSe quantum dots (QDs). Using this structure, a nearly 30-fold enhancement of Faraday rotation is observed, which scales with the quality factor
We propose a scheme to manipulate the spin coherence in vertically coupled GaAs double quantum dots. Up to {em ten} orders of magnitude variation of the spin relaxation and {em two} orders of magnitude variation of the spin dephasing can be achieved
The longitudinal and transversal spin decoherence times, $T_1$ and $T_2$, in semiconductor quantum dots are investigated from equation-of-motion approach for different magnetic fields, quantum dot sizes, and temperatures. Various mechanisms, such as