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We demonstrate electrical control of the spin relaxation time T_1 between Zeeman split spin states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the spin-orbit interaction, and by manipulating the orbital states of the dot using gate voltages we vary the relaxation rate W= (T_1)^-1 by over an order of magnitude. The dependence of W on orbital confinement agrees with theoretical predictions and from these data we extract the spin-orbit length. We also measure the dependence of W on magnetic field and demonstrate that spin-orbit mediated coupling to phonons is the dominant relaxation mechanism down to 1T, where T_1 exceeds 1s.
We report electronic control and measurement of an imbalance between spin-up and spin-down electrons in micron-scale open quantum dots. Spin injection and detection was achieved with quantum point contacts tuned to have spin-selective transport, with
We study spin relaxation in a two-electron quantum dot in the vicinity of the singlet-triplet crossing. The spin relaxation occurs due to a combined effect of the spin-orbit, Zeeman, and electron-phonon interactions. The singlet-triplet relaxation ra
We study the impacts of the magnetic field direction on the spin-manipulation and the spin-relaxation in a one-dimensional quantum dot with strong spin-orbit coupling. The energy spectrum and the corresponding eigenfunctions in the quantum dot are ob
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear d
Spin dephasing via the spin-orbit interaction (SOI) is a major mechanism limiting the electron spin lifetime in III-V zincblende quantum wells. The dephasing can be suppressed in GaAs(111) quantum wells by applying an electric field. The suppression