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Register a new userLarge-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer
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Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on doping magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the gap opening is due to the time-reversal symmetry breaking or not. Furthermore, the realization of the QAHE has been limited to low temperatures. Here we have succeeded in generating a massive Dirac cone in a MnBi2Se4 /Bi2Se3 heterostructure which was fabricated by self-assembling a MnBi2Se4 layer on top of the Bi2Se3 surface as a result of the co-deposition of Mn and Se. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the fabricated MnBi2Se4 /Bi2Se3 heterostructure shows ferromagnetism up to room temperature and a clear Dirac-cone gap opening of ~100 meV without any other significant changes in the rest of the band structure. It can be considered as a result of the direct interaction of the surface Dirac cone and the magnetic layer rather than a magnetic proximity effect. This spontaneously formed self-assembled heterostructure with a massive Dirac spectrum, characterized by a nontrivial Chern number C = -1, has a potential to realize the QAHE at significantly higher temperatures than reported up to now and can serve as a platform for developing future topotronics devices.
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Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge states are hosted by a magnetic energy gap at the Dirac point but all attempts to observe it directly have been unsuccessful. The gap size is considered crucial to overcoming the present limitations of the QAHE, which so far occurs only at temperatures one to two orders of magnitude below its principle limit set by the ferromagnetic Curie temperature $T_C$. Here, we use low temperature photoelectron spectroscopy to unambiguously reveal the magnetic gap of Mn-doped Bi$_2$Te$_3$ films, which is present only below $T_C$. Surprisingly, the gap turns out to be $sim$90 meV wide, which not only exceeds $k_BT$ at room temperature but is also 5 times larger than predicted by density functional theory. By an exhaustive multiscale structure characterization we show that this enhancement is due to a remarkable structure modification induced by Mn doping. Instead of a disordered impurity system, it forms an alternating sequence of septuple and quintuple layer blocks, where Mn is predominantly incorporated in the septuple layers. This self-organized heterostructure substantially enhances the wave-function overlap and the size of the magnetic gap at the Dirac point, as recently predicted. Mn-doped Bi$_2$Se$_3$ forms a similar heterostructure, however, only a large, nonmagnetic gap is formed. We explain both differences based on the higher spin-orbit interaction in Bi$_2$Te$_3$ with the most important consequence of a magnetic anisotropy perpendicular to the films, whereas for Bi$_2$Se$_3$ the spin-orbit interaction it is too weak to overcome the dipole-dipole interaction. Our findings provide crucial insights for pushing the lossless transport properties of topological insulators towards room-temperature applications.
The search of direct-gap Si-based semiconductors is of great interest due to the potential application in many technologically relevant fields. This work examines the incorporation of He as a possible route to form a direct band gap in Si. Structure predictions and first-principles calculations have shown that He reacts with Si at high pressure, to form the stable compounds Si2He and Si3He. Both compounds have host-guest structures consisting of a channel-like Si host framework filled with He guest atoms. The Si frameworks in two compounds could be persisted to ambient pressure after removal of He, forming two pure Si allotropes. Both Si-He compounds and both Si allotropes exhibit direct or quasi-direct band gaps of 0.84-1.34 eV, close to the optimal value (~1.3 eV) for solar cell applications. Analysis shows that Si2He with an electric-dipole-transition allowed band gap possesses higher absorption capacity than diamond cubic Si, which makes it to be a promising candidate material for thin-film solar cell.
Heterostructures between topological insulators (TI) and magnetic insulators represent a pathway to realize the quantum anomalous Hall effect (QAHE). Using density functional theory based systematic screening and investigation of thermodynamic, magnetic and topological properties of heterostructures, we demonstrate that forming a type-I heterostructure between a wide gap antiferromagnetic insulator Cr$_2$O$_3$ and a TI-film, such as Sb$_2$Te$_3$, can lead to pinning of the Fermi-level at the center of the gap, even when magnetically doped. Cr-doping in the heterostructure increases the gap to $sim$ 64.5 meV, with a large Zeeman energy from the interfacial Cr dopants, thus overcoming potential metallicity due to band bending effects. By fitting the band-structure around the Fermi-level to a 4-band k.p model Hamiltonian, we show that Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ is a Chern insulator with a Chern number C = -1. Transport calculations further show chiral edge-modes localized at the top/bottom of the TI-film to be the dominant current carriers in the material. Our predictions of a large interfacial magnetism due to Cr-dopants, that coupled antiferromagnetically to the AFM substrate is confirmed by our polarised neutron reflectometry measurements on MBE grown Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ heterostructures, and is consistent with a positive exchange bias measured in such systems recently. Consequently, Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ heterostructure represents a promising platform for the development of functional topological magnetic devices, with high tunability.
We demonstrate a new method of designing 2D functional magnetic topological heterostructure (HS) by exploiting the vdw heterostructure (vdw-HS) through combining 2D magnet CrI$_3$ and 2D materials (Ge/Sb) to realize new 2D topological system with nonzero Chern number (C=1) and chiral edge state. The nontrivial topology originates primarily from the CrI$_3$ layer while the non-magnetic element induces the charge transfer process and proximity enhanced spin-orbit coupling. Due to these unique properties, our topological magnetic vdw-HS overcomes the weak magnetization via proximity effect in previous designs since the magnetization and topology coexist in the same magnetic layer. Specifically, our systems of bilayer CrI$_3$/Sb and trilayer CrI$_3$/Sb/CrI$_3$ exhibit different topological ground state ranging from antiferromagnetic topological crystalline insulator (C$_M$= 2) to a QAHE. These nontrivial topological transition is shown to be switchable in a trilayer configuration due to the magnetic switching from antiferromagnetism to ferromangetism in the presence an external perpendicular electric field with value as small as 0.05 eV/A. Thus our study proposes a realistic system to design switchable magnetic topological device with electric field.
Topological Insulator (TI) has recently emerged as an attractive candidate for possible application to spintronic circuits because of its strong spin orbit coupling. TIs are unique materials that have an insulating bulk but conducting surface states due to band inversion and these surface states are protected by time reversal symmetry. In this paper, we propose a physics-based spin dynamics simulation framework for TI/Ferromagnet (TI/FM) bilayer heterostructures that is able to capture the electronic band structure of a TI while calculating the electron and spin transport properties. Our model differs from TI/FM models proposed in the literature in that it is able to account for the 3D band structure of TIs and the effect of exchange coupling and external magnetic field on the band structure. Our proposed approach uses 2D surface Hamiltonian for TIs that includes all necessary features for spin transport calculations so as to properly model the characteristics of a TI/FM heterostructure. Using this Hamiltonian and appropriate parameters, we show that the effect of quantum confinement and exchange coupling are successfully captured in the calculated surface band structure compared with the quantum well band diagram of a 3D TI, and matches well with experimental data reported in the literature. We then show how this calibrated Hamiltonian is used with the self-consistent non equilibrium Greens functions (NEGF) formalism to determine the charge and spin transport in TI/FM bilayer heterostructures. Our calculations agree well with experimental data and capture the unique features of a TI/FM heterostructure such as high spin Hall angle, high spin conductivity etc. Finally, we show how the results obtained from NEGF calculations may be incorporated into the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) formulation to simulate the magnetization dynamics of an FM layer sitting on top of a TI.
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